Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS

IF 1.2 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-11-01 DOI:10.15251/cl.2023.2011.837
T. A. Chowdhury, S.M.T. Hossain, M.K. Anna, S.A. Ritu, S.F. Nuri
{"title":"Numerical optimization of tin sulphide based solar cell for different buffer layers using SCAPS","authors":"T. A. Chowdhury, S.M.T. Hossain, M.K. Anna, S.A. Ritu, S.F. Nuri","doi":"10.15251/cl.2023.2011.837","DOIUrl":null,"url":null,"abstract":"Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of their outstanding semiconducting features. In this work, the solar cell capacitance simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO2) in comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) is evaluated as a function of absorber layer thickness, different buffer layer and buffer layer thickness. Device stability at different operating temperature is also evaluated. The simulation results reveal the fabrication of high efficiency SnS based solar cells.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/cl.2023.2011.837","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Researchers are doing intense research in tin sulfide (SnS)-based solar cells because of their outstanding semiconducting features. In this work, the solar cell capacitance simulator (SCAPS-1D) has been used to do the simulation study of thin films solar cells using SnS absorber layer with different buffer layers (ZnO, ZnSe, CdZnS, TiO2) in comparison to the toxic CdS buffer layer. Photovoltaic parameters (open circuit voltage, fill factor, short-circuit current density and efficiency) is evaluated as a function of absorber layer thickness, different buffer layer and buffer layer thickness. Device stability at different operating temperature is also evaluated. The simulation results reveal the fabrication of high efficiency SnS based solar cells.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用 SCAPS 对不同缓冲层的硫化锡基太阳能电池进行数值优化
由于硫化锡(SnS)具有出色的半导体特性,研究人员正在对其太阳能电池进行深入研究。在这项工作中,太阳能电池电容模拟器(SCAPS-1D)被用来对使用硫化锡吸收层和不同缓冲层(ZnO、ZnSe、CdZnS、TiO2)的薄膜太阳能电池进行模拟研究,并与有毒的 CdS 缓冲层进行比较。评估了光伏参数(开路电压、填充因子、短路电流密度和效率)与吸收层厚度、不同缓冲层和缓冲层厚度的函数关系。此外,还评估了器件在不同工作温度下的稳定性。模拟结果揭示了基于 SnS 的高效太阳能电池的制造过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Chalcogenide Letters
Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
1.80
自引率
20.00%
发文量
86
审稿时长
1 months
期刊介绍: Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.
期刊最新文献
Influence of the distance between evaporation source and substrate on formation of lead telluride (PbTe) nanostructures by vacuum thermal evaporation method Thickness variation on some physical properties of CdS: MgO films Cohesive energy model for the optical properties in nanostructured materials of zinc sulfide and cadmium selenide Properties of X-ray diffraction and Raman scattering in PbSe, PbS and PbS0,5Se0,5 thin films Mechanical, magnetic, and electronic characteristics of Sm-based chalcogenides for spintronics and device applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1