Voltage Contrast within Electron Microscopy: From a Curious Effect to Debugging Modern ICs

James Vickers, Blake Freeman, Neel Leslie
{"title":"Voltage Contrast within Electron Microscopy: From a Curious Effect to Debugging Modern ICs","authors":"James Vickers, Blake Freeman, Neel Leslie","doi":"10.31399/asm.edfa.2023-4.p028","DOIUrl":null,"url":null,"abstract":"A scanning electron microscope system measures voltage contrast on device-under-test surfaces. This article addresses a limited set of applications that rely on voltage contrast (VC) measurements in SEM systems, showing how VC measurements can probe electrical activity running at speeds as high as 2 GHz on modern active integrated circuits.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2023-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2023-4.p028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A scanning electron microscope system measures voltage contrast on device-under-test surfaces. This article addresses a limited set of applications that rely on voltage contrast (VC) measurements in SEM systems, showing how VC measurements can probe electrical activity running at speeds as high as 2 GHz on modern active integrated circuits.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
电子显微镜中的电压对比:从奇异效应到调试现代集成电路
扫描电子显微镜系统测量被测设备表面的电压对比度。本文讨论了扫描电子显微镜系统中依赖电压对比度(VC)测量的一组有限应用,展示了电压对比度测量如何探测现代有源集成电路上以高达 2 GHz 的速度运行的电气活动。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Processes for Thinning and Polishing Highly Warped Die to a Nearly Consistent Thickness: Part III Four-Dimensional Scanning Transmission Electron Microscopy: Part II, Crystal Orientation and Phase, Short and Medium Range Order, and Electromagnetic Fields The Electronics Resurgence Initiative 2.0 for U.S. Semiconductor Manufacturing Advanced Characterization of Materials Using Atom Probe Tomography Laser-Based Copper Deposition for Semiconductor Debug Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1