Study of population dynamics toward the development of atomic X-ray lasers in the 3–5 keV photon energies

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-01-01 DOI:10.35848/1347-4065/ad14a7
Jaeuk Heo, Dong Eon Kim
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Abstract

X-ray free-electron lasers (XFELs) are powerful tools for characterizing and probing the properties of matter at atomic resolution on the ultrafast timescale. However, they have certain limitations such as spectral fluctuation and poor temporal coherence. Atomic X-ray lasers offer the narrow bandwidth, longitudinal coherence, and spectral stability that can overcome these limitations. In this paper, we study the interaction of inner-shell vacancy states with high-intensity XFEL pulses. We show that it is possible to achieve population inversion between K-shell and L-shell vacancy states in calcium and titanium when pumped by high-intensity XFEL pulses. These states can be used to generate atomic X-ray laser emission in the 3–5 keV photon energy range.
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为开发 3-5 keV 光子能量的原子 X 射线激光器而进行的种群动力学研究
X 射线自由电子激光器(XFEL)是在超快时间尺度上以原子分辨率表征和探测物质特性的强大工具。然而,它们也有一定的局限性,如光谱波动和较差的时间相干性。原子 X 射线激光器具有窄带宽、纵向一致性和光谱稳定性,可以克服这些局限性。在本文中,我们研究了内壳空位态与高强度 XFEL 脉冲的相互作用。我们的研究表明,在高强度 XFEL 脉冲的泵浦作用下,钙和钛的 K 壳空位态和 L 壳空位态之间可以实现种群反转。这些状态可用于产生 3-5 keV 光子能量范围内的原子 X 射线激光发射。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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