Spin Glass Model for GaAs/AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal-Insulator Transition

IF 1 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY Journal of Experimental and Theoretical Physics Pub Date : 2024-01-12 DOI:10.1134/s1063776123110018
N. V. Agrinskaya, V. I. Kozub
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Abstract

In a previous report, we presented experiments which suggested that ferromagnetic ordering of the spins of localized holes in GaAs/AlGaAs quantum wells could be observed when doped with shallow (Be) acceptors at impurity concentrations near the metal-insulator transition. The compensating impurity (Si) was introduced into a narrow region at the center of the barriers [4]. In this paper, we present results from magnetotransport experiments performed on similar structures, but without the compensating impurity (Si). In these samples, the compensation degree is expected to be controlled by the background defects located at the edges of the quantum wells and within the barriers. At low temperatures T ≤ 10 K, we observed isotropic, linear magnetoresistance, anomalous behavior of the Hall effect as a function of the magnetic field, and slow relaxation of resistance after the application of a magnetic field. We explain this anomalous magnetotransport as the manifestation of a ferromagnetic transition or spin glass, originating from indirect spin exchange between localized holes on impurities near the metal-insulator transition. However, we note that perfect disorder, including signs of interspin interactions, leads to unstable configurations. In what follows, we present a model in which we start with this perfect disorder, but apply a procedure to obtain a stable configuration. We show that the resulting spin structure, a “closely packed” structure of “droplets,” can reproduce the features observed in the experiment, particularly isotropic, linear magnetoresistance.

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金属-绝缘体转变附近非磁性杂质掺杂的砷化镓/砷化镓量子阱的自旋玻璃模型
摘要 在之前的报告中,我们通过实验表明,在 GaAs/AlGaAs 量子阱中掺入浅(Be)受体,杂质浓度接近金属-绝缘体转变时,可以观察到局部空穴自旋的铁磁有序化。补偿杂质(硅)被引入到势垒中心的狭窄区域 [4]。在本文中,我们介绍了在类似结构上进行的磁传输实验结果,但没有补偿杂质(硅)。在这些样品中,补偿程度预计由量子阱边缘和势垒内的背景缺陷控制。在温度 T ≤ 10 K 的低温条件下,我们观察到了各向同性的线性磁阻、霍尔效应作为磁场函数的反常行为,以及施加磁场后电阻的缓慢弛豫。我们将这种反常的磁传输解释为铁磁转变或自旋玻璃的表现,它源于金属-绝缘体转变附近杂质上局部空穴之间的间接自旋交换。然而,我们注意到,完全无序(包括自旋间相互作用的迹象)会导致不稳定的构型。在下文中,我们将介绍一个模型,在这个模型中,我们从这种完全无序开始,但采用一种程序来获得稳定构型。我们展示了由此产生的自旋结构--"紧密堆积 "的 "液滴 "结构--能够再现实验中观察到的特征,尤其是各向同性的线性磁阻。
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来源期刊
CiteScore
1.90
自引率
9.10%
发文量
130
审稿时长
3-6 weeks
期刊介绍: Journal of Experimental and Theoretical Physics is one of the most influential physics research journals. Originally based on Russia, this international journal now welcomes manuscripts from all countries in the English or Russian language. It publishes original papers on fundamental theoretical and experimental research in all fields of physics: from solids and liquids to elementary particles and astrophysics.
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