{"title":"Voltage ramp stress based lifetime-prediction model of advanced Al-doped HfO2 dielectric for 2.5D MIMCAPs","authors":"Corinna Fohn , Emmanuel Chery , Kristof Croes , Michele Stucchi , Valeri Afanas’ev","doi":"10.1016/j.sse.2024.108864","DOIUrl":null,"url":null,"abstract":"<div><p>The reliability of an Al-doped HfO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span><span><span> dielectric<span> used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted </span></span>activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high-</span><span><math><mi>κ</mi></math></span> material at high fields.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000133","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The reliability of an Al-doped HfO dielectric used in a high density 2.5D MIMCAP is investigated by constant voltage stress (CVS) and voltage ramp stress (VRS) measurements. The good agreement of the results from the two techniques allows to propose a model for lifetime prediction based on the breakdown characteristics. The extracted activation energy shows a voltage dependence associated with a change in the degradation characteristics of the high- material at high fields.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
