Development of ZnO and Si semiconductor-based ultraviolet photodetectors enhanced by laser-ablated silver nanoparticles

Abstract

The present study employs a cost-effective laser ablation technique in combination with the RF sputtering method to successfully synthesize silver nanoparticles encapsulated by zinc oxide on a silicon (Si) substrate. This synthesis approach aims to enhance the efficiency of photodetector devices while concurrently reducing material expenses, thereby promoting advancements in photodetector applications. The incorporation of various plasmonic nanoparticles (NPs) into the photodetector's architecture is demonstrated as a means to substantially improve the photoresponse of UV photodetectors. Three distinct samples, denoted as AgNPs/Si, AgNPs/ZnO/Si, and ZnO/AgNPs/Si, underwent comprehensive analysis and characterization of their morphological attributes, crystal structures, elemental composition, and optical properties. The UV photodetection efficacy of these samples was evaluated by subjecting them to 385 nm UV light at different bias voltages. The current-voltage (I-V) characteristics of the ZnO/AgNPs/Si photodetector revealed significantly enhanced conductivity in comparison to the AgNPs/Si and AgNPs/ZnO/Si counterparts. Remarkably, the ZnO/AgNPs/Si photodetector exhibited the highest responsivity value of 132 A/W, accompanied by quantum efficiency of 429.88, sensitivity of 31,400%, gain of 315, detectivity of 18 × 10¹⁰ Jones, and a noise equivalent power (NEP) of 0.556 × 10^–13 W. These findings underscore the efficacy of our innovative broadband photodetector, highlighting its potential for practical implementation. This research offers valuable insights into the enhancement of photodetector performance and its applicability in real-world scenarios.