2D Molecular Ferroelectric with Large Out-of-plane Polarization for In-Memory Computing

Abstract

2D ferroelectric materials with out-of-plane polarization are crucial for future nanoscale logic devices due to the increasing demand for energy-efficient architectures in artificial intelligence. However, only a few 2D out-of-plane ferroelectrics are confirmed experimentally. As an important branch of ferroelectrics, organic–inorganic hybrid perovskite ferroelectrics show flexible structures, making them eligible for constructing multifunctional materials. Here, a 2D organic–inorganic hybrid perovskite ferroelectric (6-BHA)₂CdBr₄ (6-BHA is 6-bromohexylamine) is designed, which crystallizes in polar point group C_c. It experiences the reversal phase transition at 317.8 K and possesses multiaxial ferroelectric properties. More interestingly, it exhibits a large spontaneous polarization value of 3.26 µC cm⁻² in out-of-plane direction of the film compared with typical 2D ferroelectrics. Moreover, an inverter based on (6-BHA)₂CdBr₄ is fabricated, which serves as a proof of concept for the feasibility for logic-in-memory devices. This work not only enriches the family of molecular ferroelectrics but also shows the potential to create the next generation of in-memory computing devices, nanoelectronics devices, and ultra-high-density memories.