Fengkai Liu;Cuancuan Zhu;Zhongli Liu;Jianqun Yang;Yadong Wei;Yubao Zhang;Xingji Li
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引用次数: 0
Abstract
Hydrogen molecules in the SiO2 layer and the Si-SiO2 interface play a key role in the reliability of Si-based devices by affecting the formation of defects. This paper focuses on the effect of hydrogen molecule release on the negative bias temperature instability (NBTI) by low-temperature pre-treatment (LTPT) in p-channel power vertical-double-diffused metal-oxide-semiconductor field-effect transistor (VDMOSFET). The negative bias temperature stress (NBTS) and LTPT are observed to be able to shift the threshold voltage. The number of defects is separated by the subthreshold midgap technique (SMGT). The evolution of atoms at low temperature and the formation of defects during NBTS are verified through simulation and theoretical analysis, respectively. Additionally, it is also validated by a hydrogen-soaking pre-treatment (HSPT) experiment. The LTPT makes it easier for reactive hydrogen atoms to form hydrogen molecules. This process can promote the conversion of oxide charges to interface traps during NBTS and may even exacerbate the instability. Furthermore, although LTPT has been proven to improve device performance, it is not effective in mitigating instability during NBTS. Overall, this discovery points to a superior method of reducing NBTI by decreasing hydrogen-related impurities during the manufacturing and packaging processes of p-channel power VDMOS transistors.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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