{"title":"Polycrystalline GeSn films grown by HWCVD on SiO2/Si(001) substrates","authors":"V.G. Shengurov, Yu.N. Buzynin, V. Yu. Chalkov, A.V. Nezhdanov, A.V. Kudrin, P.A. Yunin","doi":"10.1002/pssr.202300484","DOIUrl":null,"url":null,"abstract":"The conditions for the growth of polycrystalline GeSn films on SiO<sub>2</sub>/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm<sup>2</sup>/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"242 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi-Rapid Research Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssr.202300484","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The conditions for the growth of polycrystalline GeSn films on SiO2/Si(001) substrates by HWCVD have been determined for the first time. The effect of the introduction of Sn into the Ge lattice on the morphology, structure and transport properties of films has been studied. GeSn films obtained at 300°C have a uniform surface with a roughness of less than 1.0 nm. It has been shown that the introduction of 5% Sn allows, without the use of recrystallization annealing, to significantly increase the hole mobility of polycrystalline GeSn films from 20 to 60 cm2/V×s. despite the small grain size of 35 nm. Such films are of great interest for creating thin film transistors for active matrices liquid crystal displays.
期刊介绍:
Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers.
The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.