The etching of p‐GaN requires extremely strict control over etching depth and morphology; otherwise, it will result in poor electrical characteristics. This work uses ALD(Atomic layer deposition) in situ N2 plasma and postanneal‐assisted passivation to effectively recover the electrical properties degraded by p‐GaN etching. Compared to unpassivated devices, this approach eliminates surface oxygen bonds, recovering drain current from 10 to 126 mA mm−1, reducing gate leakage by an order of magnitude, achieving an ON/OFF current ratio exceeding 108, a breakdown voltage of 930 V at 1 μA mm−1, and effectively suppressing current collapse.
对氮化镓的蚀刻需要对蚀刻深度和形态进行极其严格的控制，否则会导致电气特性变差。这项研究利用 ALD（原子层沉积）原位 N2 等离子体和退火后辅助钝化技术，有效地恢复了因 p-GaN 刻蚀而退化的电气特性。与未钝化器件相比，这种方法消除了表面氧键，使漏极电流从 10 mA mm-1 恢复到 126 mA mm-1，栅极漏电流降低了一个数量级，导通/关断电流比超过 108，在 1 μA mm-1 时击穿电压达到 930 V，并有效抑制了电流塌陷。
{"title":"Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation","authors":"Yingfei Sun, Guohao Yu, Ang Li, Shaoqian Lu, Yu Li, Yuxiang Zhang, Zhongkai Du, Bingliang Zhang, Zixuan Huang, Desheng Zhao, Zhongming Zeng, Baoshun Zhang","doi":"10.1002/pssr.202400211","DOIUrl":"https://doi.org/10.1002/pssr.202400211","url":null,"abstract":"The etching of p‐GaN requires extremely strict control over etching depth and morphology; otherwise, it will result in poor electrical characteristics. This work uses ALD(Atomic layer deposition) in situ N<jats:sub>2</jats:sub> plasma and postanneal‐assisted passivation to effectively recover the electrical properties degraded by p‐GaN etching. Compared to unpassivated devices, this approach eliminates surface oxygen bonds, recovering drain current from 10 to 126 mA mm<jats:sup>−1</jats:sup>, reducing gate leakage by an order of magnitude, achieving an ON/OFF current ratio exceeding 10<jats:sup>8</jats:sup>, a breakdown voltage of 930 V at 1 μA mm<jats:sup>−1</jats:sup>, and effectively suppressing current collapse.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"18 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142252152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ignatii Zaitsev, Davide Spirito, Jacopo Frigerio, Carlos Alvarado Chavarin, Anke Lüdge, Wolfgang Lüdge, Raffaele Giani, Michele Virgilio, Costanza Lucia Manganelli
Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.
应变工程是优化半导体器件电子和光学特性的有效方法，其应用包括增强基于 Ge 和 GeSn 器件的光发射、提高载流子迁移率以及硅光子结构中的二次谐波生成。目前的半导体形变表征方法，如 X 射线衍射和拉曼光谱，通常需要笨重而昂贵的装置，而且垂直分辨率有限。因此，既能测量晶格应变，又能克服这些缺点的技术非常受欢迎。本研究提出了一种经济、紧凑、快速、非破坏性的概念验证方法，利用体光电压效应探测非均匀应变场和其他材料特性。该方法以在不同压力条件下沉积在锗基底上的氮化硅条纹阵列为基准。首先，通过拉曼光谱验证其表面应变。通过将机械模拟与形变势理论相结合，在有限元法平台上复制了形变，从而估算出了带缘能谱。最后，考虑到半导体特性、缺陷、掺杂和变形，研究讨论了光电压信号的理论行为。研究结果为开发半导体材料应变和传输分析的先进技术提供了启示。
{"title":"On the Bulk Photovoltaic Effect in the Characterization of Strained Germanium Microstructures","authors":"Ignatii Zaitsev, Davide Spirito, Jacopo Frigerio, Carlos Alvarado Chavarin, Anke Lüdge, Wolfgang Lüdge, Raffaele Giani, Michele Virgilio, Costanza Lucia Manganelli","doi":"10.1002/pssr.202400220","DOIUrl":"https://doi.org/10.1002/pssr.202400220","url":null,"abstract":"Strain engineering serves as an effective method for optimizing electronic and optical properties in semiconductor devices, with applications including the enhancement of optical emission in Ge and GeSn‐based devices, improvement of carrier mobility, and second harmonic generation in silicon photonics structures. Current methods for deformation characterization in semiconductors, such as X‐ray diffraction and Raman spectroscopy, often require bulky and expensive setups and are limited in vertical resolution. Consequently, techniques capable of measuring lattice strain while overcoming these drawbacks are highly desirable. This study proposes a proof of concept for a cost‐effective, compact, fast, and non‐destructive approach to probe non‐uniform strain fields and additional material properties by exploiting the bulk photovoltage effect. The method is benchmarked with an array of silicon nitride stripes deposited under varying pressure conditions on a germanium substrate. Initially, their surface strains are verified through Raman spectroscopy. The deformations are replicated in a finite element method platform by integrating mechanical simulations with deformation potential theory, thereby estimating the band edge energy landscape. Finally, the study discusses the theoretical behavior of the photovoltage signal, considering semiconductor properties, defects, doping, and deformation. The findings offer insights into the development of advanced techniques for strain and transport analysis in semiconductor materials.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"208 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142252156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the optical properties (light reflectance, absorptance, transmittance, and scattering) of black silicon (b‐Si) layers formed using reactive ion etching method. The corresponding spectra are determined across the visible, near‐infrared, and near‐ultraviolet wavelength ranges (250–1400 nm). It is demonstrated that b‐Si layers reduce the reflectance, and increase the absorptance and light scattering due to the disordered distribution of the nanoneedles. Increasing the etching duration strengthens this trend. It is shown that b‐Si layers etched for 10 min can be considered perfect light scatterers upon reflection at wavelengths less than 700 nm. Based on the obtained results, the possible profits of light scattering from the b‐Si interlayer for perovskite/Si tandem solar cells are analyzed. It is substantiated that the b‐Si interlayer can increase the useful absorptance not only within the bottom Si solar subcell but also in the top perovskite solar subcell. The prospects for future research directions and challenges are also provided.
{"title":"Wide‐Range Wavelength Light Scattering from Black Silicon Layers: Profits for Perovskite/Si Tandem Solar Cells","authors":"Gagik Ayvazyan, Harutyun Dashtoyan, Levon Hakhoyan","doi":"10.1002/pssr.202400235","DOIUrl":"https://doi.org/10.1002/pssr.202400235","url":null,"abstract":"This study investigates the optical properties (light reflectance, absorptance, transmittance, and scattering) of black silicon (b‐Si) layers formed using reactive ion etching method. The corresponding spectra are determined across the visible, near‐infrared, and near‐ultraviolet wavelength ranges (250–1400 nm). It is demonstrated that b‐Si layers reduce the reflectance, and increase the absorptance and light scattering due to the disordered distribution of the nanoneedles. Increasing the etching duration strengthens this trend. It is shown that b‐Si layers etched for 10 min can be considered perfect light scatterers upon reflection at wavelengths less than 700 nm. Based on the obtained results, the possible profits of light scattering from the b‐Si interlayer for perovskite/Si tandem solar cells are analyzed. It is substantiated that the b‐Si interlayer can increase the useful absorptance not only within the bottom Si solar subcell but also in the top perovskite solar subcell. The prospects for future research directions and challenges are also provided.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"100 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142252153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, a model is proposed for measuring the structural defects size r0 in an ultrathin magnetic layer with perpendicular magnetic anisotropy. Based on the observations of magnetic domains in Ta/Pt/Co/Pt ultrathin films, using polar magneto‐optical Kerr effect microscopy and measurements of their magnetic anisotropies, the correlation between magnetic domains size D and structural defects size r0, as well as the defects concentration parameter αK, which designates the degree of pinning, has been modeled. The average r0 value found is high in the sample with unannealed buffer layers and considerably decreases with annealing. It is 6.17 nm with unannealed Ta/Pt buffer layers, 1.06 nm in sample with Ta/Pt buffer layers annealed at 423 K, and 0.49 nm in that with buffer layers annealed at 573 K. The significant drop of r0 is in good agreement with the high depinning noted with buffer layers annealing in recent work.
本文提出了一个测量具有垂直磁各向异性的超薄磁层中结构缺陷尺寸 r0 的模型。利用极磁光克尔效应显微镜观察 Ta/Pt/Co/Pt 超薄薄膜中的磁畴，并测量其磁各向异性，在此基础上建立了磁畴尺寸 D 和结构缺陷尺寸 r0 之间的相关性模型，以及表示钉化程度的缺陷浓度参数 αK。在未退火缓冲层的样品中发现的平均 r0 值较高，并随着退火而大幅降低。未退火的钽/铂缓冲层的 r0 值为 6.17 nm，在 423 K 退火的钽/铂缓冲层样品中为 1.06 nm，在 573 K 退火的缓冲层样品中为 0.49 nm。
{"title":"Magnetic Domain and Structural Defects Size in Ultrathin Films","authors":"Assiongbon Adanlété Adjanoh, Tchilabalo Pakam, Serge Dzo Mawuefa Afenyiveh","doi":"10.1002/pssr.202400215","DOIUrl":"https://doi.org/10.1002/pssr.202400215","url":null,"abstract":"Herein, a model is proposed for measuring the structural defects size <jats:italic>r</jats:italic><jats:sub>0</jats:sub> in an ultrathin magnetic layer with perpendicular magnetic anisotropy. Based on the observations of magnetic domains in Ta/Pt/Co/Pt ultrathin films, using polar magneto‐optical Kerr effect microscopy and measurements of their magnetic anisotropies, the correlation between magnetic domains size <jats:italic>D</jats:italic> and structural defects size <jats:italic>r</jats:italic><jats:sub>0</jats:sub>, as well as the defects concentration parameter <jats:italic>α</jats:italic><jats:sub>K</jats:sub>, which designates the degree of pinning, has been modeled. The average <jats:italic>r</jats:italic><jats:sub>0</jats:sub> value found is high in the sample with unannealed buffer layers and considerably decreases with annealing. It is 6.17 nm with unannealed Ta/Pt buffer layers, 1.06 nm in sample with Ta/Pt buffer layers annealed at 423 K, and 0.49 nm in that with buffer layers annealed at 573 K. The significant drop of <jats:italic>r</jats:italic><jats:sub>0</jats:sub> is in good agreement with the high depinning noted with buffer layers annealing in recent work.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"58 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xin Gu, Diancheng Zhu, Shouxi Xu, Jing Hu, Miao Cheng, Tao Wei, Qianqian Liu, Ruirui Wang, Wanfei Li, Yun Ling, Bo Liu
Developing room temperature (RT) gas sensor based on metal oxide semiconductor material has long been challenging. Herein, a 1D hierarchical Ag‐modified Cu@Cu2O/CuO nanocomposite has been designed by low‐temperature etching self‐assembly combined with photochemical deposition method based on Cu nanowires (NWs). After a step of alkaline solution etching, the surface of Cu NWs is self‐assembled to form a hierarchical Cu@Cu2O/CuO, and then Ag nanoparticles are modified on its surface by photochemical deposition to obtain the desired material. All the preparation processes are carried out at RT and have good controllability. When applied as sensing material, the optimal Cu@Cu2O/CuO/Ag nanocomposite exhibits high response of ≈337.0 to 10 ppm NO2 with excellent selectivity and fast response/recovery (60/400 s) at 25 °C. It is worth noting that such a strategy of loading Ag nanoparticles improves its gas sensitivity by about 42.4 times, and the resulting sensor shows good sensitivity and screening ability to NO2 in the low concentration range. Finally, the nanostructure of the material is characterized systematically and the sensing mechanism is discussed.
{"title":"Photochemical Fabrication of Ag‐Modified Hierarchical Cu@Cu2O/CuO Nanocomposite Toward Room Temperature NO2 Detection","authors":"Xin Gu, Diancheng Zhu, Shouxi Xu, Jing Hu, Miao Cheng, Tao Wei, Qianqian Liu, Ruirui Wang, Wanfei Li, Yun Ling, Bo Liu","doi":"10.1002/pssr.202400223","DOIUrl":"https://doi.org/10.1002/pssr.202400223","url":null,"abstract":"Developing room temperature (RT) gas sensor based on metal oxide semiconductor material has long been challenging. Herein, a 1D hierarchical Ag‐modified Cu@Cu<jats:sub>2</jats:sub>O/CuO nanocomposite has been designed by low‐temperature etching self‐assembly combined with photochemical deposition method based on Cu nanowires (NWs). After a step of alkaline solution etching, the surface of Cu NWs is self‐assembled to form a hierarchical Cu@Cu<jats:sub>2</jats:sub>O/CuO, and then Ag nanoparticles are modified on its surface by photochemical deposition to obtain the desired material. All the preparation processes are carried out at RT and have good controllability. When applied as sensing material, the optimal Cu@Cu<jats:sub>2</jats:sub>O/CuO/Ag nanocomposite exhibits high response of ≈337.0 to 10 ppm NO<jats:sub>2</jats:sub> with excellent selectivity and fast response/recovery (60/400 s) at 25 °C. It is worth noting that such a strategy of loading Ag nanoparticles improves its gas sensitivity by about 42.4 times, and the resulting sensor shows good sensitivity and screening ability to NO<jats:sub>2</jats:sub> in the low concentration range. Finally, the nanostructure of the material is characterized systematically and the sensing mechanism is discussed.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"64 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maria Rita Cicconi, Tomokatsu Hayakawa, Brahim Dkhil, Marin Alexe
{"title":"Materials for Energy Conversion Systems: Fundamentals, Designs, and Applications","authors":"Maria Rita Cicconi, Tomokatsu Hayakawa, Brahim Dkhil, Marin Alexe","doi":"10.1002/pssr.202400251","DOIUrl":"https://doi.org/10.1002/pssr.202400251","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"6 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haruto Hashimoto, Ryohei Oka, Tomokatsu Hayakawa, Christoph Brabec
{"title":"Bandgap and Photoluminescence Tunability of Lead‐Free Cs3Bi2(Br,I)9 Solid Solution Compounds","authors":"Haruto Hashimoto, Ryohei Oka, Tomokatsu Hayakawa, Christoph Brabec","doi":"10.1002/pssr.202470021","DOIUrl":"https://doi.org/10.1002/pssr.202470021","url":null,"abstract":"","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"16 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Herein, the multiferroic perovskite Er0.9La0.1Cr0.8Fe0.2O3 was synthesized using the sol–gel method, and its structure and multiferroic properties were investigated. The magnetic order of Er0.9La0.1Cr0.8Fe0.2O3 was analyzed through magnetic entropy change curves. Furthermore, a four‐sublattice molecular field model was constructed to study the spin reorientation phenomena and explain the differences between various spin redirections through magnetic order correction. This work will provide a new perspective for studying the properties of type II multiferroic materials.
{"title":"Study of the Structure, Multiferroic, and Magnetic Order of Er0.9La0.1Cr0.8Fe0.2O3","authors":"Kaiyang Gao, Hengjian Hou, Jiyu Shen, Zeyi Lu, Jiajun Mo, Guoqing Liu, Zhongjin Wu, Chenying Gong, Dong Xie, Yanfang Xia, Min Liu","doi":"10.1002/pssr.202300144","DOIUrl":"https://doi.org/10.1002/pssr.202300144","url":null,"abstract":"Herein, the multiferroic perovskite Er<jats:sub>0.9</jats:sub>La<jats:sub>0.1</jats:sub>Cr<jats:sub>0.8</jats:sub>Fe<jats:sub>0.2</jats:sub>O<jats:sub>3</jats:sub> was synthesized using the sol–gel method, and its structure and multiferroic properties were investigated. The magnetic order of Er<jats:sub>0.9</jats:sub>La<jats:sub>0.1</jats:sub>Cr<jats:sub>0.8</jats:sub>Fe<jats:sub>0.2</jats:sub>O<jats:sub>3</jats:sub> was analyzed through magnetic entropy change curves. Furthermore, a four‐sublattice molecular field model was constructed to study the spin reorientation phenomena and explain the differences between various spin redirections through magnetic order correction. This work will provide a new perspective for studying the properties of type II multiferroic materials.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"58 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142210993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Qasim, Asad Muhammad Iqbal, Muhammad Tahir Khan, Mohamed A. Ghanem
In this study, the enhancement of magnetic properties in Fe2O3 nanoparticles through nanostructural modification via carbon coating is investigated. Fe2O3 and carbon‐coated Fe2O3 nanoparticles are synthesized using the solvothermal method. Structural, morphological, optical, and magnetic properties are comprehensively analyzed. The results demonstrate a significant reduction in particle size upon carbon coating, effectively mitigating agglomeration. Furthermore, carbon‐coated nanoparticles exhibit substantial enhancement in coercivity, remanence, and saturation magnetization suggesting improved magnetic behavior in comparison to their uncoated counterparts. This enhancement is attributed to the prevention of spin misalignment at the nanoparticle surface by the carbon coating, as well as the formation of distinct magnetic domains due to the reduced particle size. The observed improvements underscore the effectiveness of carbon coating in tailoring the magnetic properties of Fe2O3 nanoparticles for applications in magnetic devices and biomedical systems, such as magnetic hyperthermia and drug delivery systems, where precise control over magnetic behavior is crucial.
{"title":"Nanostructural Modification of Fe2O3 Nanoparticles: Carbon Coating for Enhanced Magnetic Behavior","authors":"Muhammad Qasim, Asad Muhammad Iqbal, Muhammad Tahir Khan, Mohamed A. Ghanem","doi":"10.1002/pssr.202400230","DOIUrl":"https://doi.org/10.1002/pssr.202400230","url":null,"abstract":"In this study, the enhancement of magnetic properties in Fe<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> nanoparticles through nanostructural modification via carbon coating is investigated. Fe<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> and carbon‐coated Fe<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> nanoparticles are synthesized using the solvothermal method. Structural, morphological, optical, and magnetic properties are comprehensively analyzed. The results demonstrate a significant reduction in particle size upon carbon coating, effectively mitigating agglomeration. Furthermore, carbon‐coated nanoparticles exhibit substantial enhancement in coercivity, remanence, and saturation magnetization suggesting improved magnetic behavior in comparison to their uncoated counterparts. This enhancement is attributed to the prevention of spin misalignment at the nanoparticle surface by the carbon coating, as well as the formation of distinct magnetic domains due to the reduced particle size. The observed improvements underscore the effectiveness of carbon coating in tailoring the magnetic properties of Fe<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> nanoparticles for applications in magnetic devices and biomedical systems, such as magnetic hyperthermia and drug delivery systems, where precise control over magnetic behavior is crucial.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"45 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142210992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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