{"title":"Performance Recovery of p‐GaN Etch‐Induced Degradation via Atomic Layer Deposition In Situ N2 Plasma and Postanneal‐Assisted Passivation","authors":"Yingfei Sun, Guohao Yu, Ang Li, Shaoqian Lu, Yu Li, Yuxiang Zhang, Zhongkai Du, Bingliang Zhang, Zixuan Huang, Desheng Zhao, Zhongming Zeng, Baoshun Zhang","doi":"10.1002/pssr.202400211","DOIUrl":null,"url":null,"abstract":"The etching of p‐GaN requires extremely strict control over etching depth and morphology; otherwise, it will result in poor electrical characteristics. This work uses ALD(Atomic layer deposition) in situ N<jats:sub>2</jats:sub> plasma and postanneal‐assisted passivation to effectively recover the electrical properties degraded by p‐GaN etching. Compared to unpassivated devices, this approach eliminates surface oxygen bonds, recovering drain current from 10 to 126 mA mm<jats:sup>−1</jats:sup>, reducing gate leakage by an order of magnitude, achieving an ON/OFF current ratio exceeding 10<jats:sup>8</jats:sup>, a breakdown voltage of 930 V at 1 μA mm<jats:sup>−1</jats:sup>, and effectively suppressing current collapse.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"18 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi-Rapid Research Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssr.202400211","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The etching of p‐GaN requires extremely strict control over etching depth and morphology; otherwise, it will result in poor electrical characteristics. This work uses ALD(Atomic layer deposition) in situ N2 plasma and postanneal‐assisted passivation to effectively recover the electrical properties degraded by p‐GaN etching. Compared to unpassivated devices, this approach eliminates surface oxygen bonds, recovering drain current from 10 to 126 mA mm−1, reducing gate leakage by an order of magnitude, achieving an ON/OFF current ratio exceeding 108, a breakdown voltage of 930 V at 1 μA mm−1, and effectively suppressing current collapse.
期刊介绍：
Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers.
The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.
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