{"title":"Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure","authors":"Guangxin Wang;Yunze He;Xuefeng Geng;Longhai Tang;Songyuan Liu;Qiying Li;Kai Zhang","doi":"10.1109/TDMR.2023.3345306","DOIUrl":null,"url":null,"abstract":"As a real-time, online, and non-invasive monitoring method, acoustic emission (AE) monitoring technology has a promising future in the condition monitoring and fault diagnosis of power devices such as power MOSFETs. Stress waves are generated when power MOSFETs are turned on and off. Currently, most scholars have only researched the influence of circuit parameters on stress waves in normal devices or the relationship between stress waves and the aging state of devices or modules. However, the correlation between the characteristics of the stress wave and the specific failures inside the device has not been determined. As a result, the experiment for gate-source overvoltage failure was carried out in this work. The differential acoustic emission sensor was used to acquire stress waves of power MOSFETs under different gate-source voltages, including stress waves during chip overvoltage failure. The characteristics of stress waves are analyzed from the perspectives of time-domain and frequency-domain, and it can be concluded that the time-domain peak-to-peak value, signal energy, and wavelet peak value of the stress wave during the failure process are significantly different from those under normal conditions. The experimental results laid the groundwork for making a connection between device failures and the characteristics of the stress wave, which indicates that it will be possible to apply the acoustic emission monitoring technology to the fault diagnosis of power devices in the future.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 1","pages":"89-97"},"PeriodicalIF":2.5000,"publicationDate":"2023-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10368059/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
As a real-time, online, and non-invasive monitoring method, acoustic emission (AE) monitoring technology has a promising future in the condition monitoring and fault diagnosis of power devices such as power MOSFETs. Stress waves are generated when power MOSFETs are turned on and off. Currently, most scholars have only researched the influence of circuit parameters on stress waves in normal devices or the relationship between stress waves and the aging state of devices or modules. However, the correlation between the characteristics of the stress wave and the specific failures inside the device has not been determined. As a result, the experiment for gate-source overvoltage failure was carried out in this work. The differential acoustic emission sensor was used to acquire stress waves of power MOSFETs under different gate-source voltages, including stress waves during chip overvoltage failure. The characteristics of stress waves are analyzed from the perspectives of time-domain and frequency-domain, and it can be concluded that the time-domain peak-to-peak value, signal energy, and wavelet peak value of the stress wave during the failure process are significantly different from those under normal conditions. The experimental results laid the groundwork for making a connection between device failures and the characteristics of the stress wave, which indicates that it will be possible to apply the acoustic emission monitoring technology to the fault diagnosis of power devices in the future.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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