Ultrathin damage-tolerant flexible metal interconnects reinforced by in-situ graphene synthesis

IF 12.3 1区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC npj Flexible Electronics Pub Date : 2024-03-08 DOI:10.1038/s41528-024-00300-8
Kaihao Zhang, Mitisha Surana, Jad Yaacoub, Sameh Tawfick
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Abstract

Conductive patterned metal films bonded to compliant elastomeric substrates form meshes which enable flexible electronic interconnects for various applications. However, while bottom-up deposition of thin films by sputtering or growth is well-developed for rigid electronics, maintaining good electrical conductivity in sub-micron thin metal films upon large deformations or cyclic loading remains a significant challenge. Here, we propose a strategy to improve the electromechanical performance of nanometer-thin palladium films by in-situ synthesis of a conformal graphene coating using chemical vapor deposition (CVD). The uniform graphene coverage improves the thin film’s damage tolerance, electro-mechanical fatigue, and fracture toughness owing to the high stiffness of graphene and the conformal CVD-grown graphene-metal interface. Graphene-coated Pd thin film interconnects exhibit stable increase in electrical resistance even when strained beyond 60% and longer fatigue life up to a strain range of 20%. The effect of graphene is more significant for thinner films of < 300 nm, particularly at high strains. The experimental observations are well described by the thin film electro-fragmentation model and the Coffin-Manson relationship. These findings demonstrate the potential of CVD-grown graphene nanocomposite materials in improving the damage tolerance and electromechanical robustness of flexible electronics. The proposed approach offers opportunities for the development of reliable and high-performance ultra-conformable flexible electronic devices.

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通过原位合成石墨烯强化超薄耐损伤柔性金属互连器件
导电图案金属膜与顺应性弹性基材粘合形成网状,可实现各种应用中的柔性电子互连。然而,虽然通过溅射或生长自下而上沉积薄膜的技术已在刚性电子器件中得到广泛应用,但要在亚微米级金属薄膜发生大变形或循环加载时保持良好的导电性仍然是一项重大挑战。在此,我们提出了一种利用化学气相沉积(CVD)原位合成保形石墨烯涂层来改善纳米级薄钯膜机电性能的策略。由于石墨烯的高刚度和保形 CVD 生长的石墨烯-金属界面,石墨烯的均匀覆盖提高了薄膜的损伤容限、机电疲劳和断裂韧性。涂有石墨烯的钯薄膜互连器件即使在应变超过 60% 的情况下也能稳定地增加电阻,并且在 20% 的应变范围内具有更长的疲劳寿命。石墨烯对 300 nm 薄膜的影响更为显著,尤其是在高应变条件下。薄膜电破碎模型和 Coffin-Manson 关系很好地描述了实验观察结果。这些发现证明了 CVD 生长的石墨烯纳米复合材料在提高柔性电子器件的损伤耐受性和机电稳健性方面的潜力。所提出的方法为开发可靠、高性能的超成型柔性电子器件提供了机会。
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来源期刊
CiteScore
17.10
自引率
4.80%
发文量
91
审稿时长
6 weeks
期刊介绍: npj Flexible Electronics is an online-only and open access journal, which publishes high-quality papers related to flexible electronic systems, including plastic electronics and emerging materials, new device design and fabrication technologies, and applications.
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