Photovoltaic Modulating Retroreflectors for Low Power Consumption Free Space Optical Communication Systems

IF 2.2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Quantum Electronics Pub Date : 2024-03-07 DOI:10.1109/JQE.2024.3374101
Benjamin C. Maglio;Crisanto Quintana;Yoann Thueux;Peter M. Smowton
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Abstract

An InGaAs-InAsP-GaInP asymmetric stepped quantum well structure is proposed for unbiased detection and subsequent modulation of an incident continuous wave optical signal for application in compact, retroreflective, free-space optical communication platforms. Such operation drastically reduces onboard power consumption in large-area, pixelated arrays by driving only optically activated pixels. A modelling routine involving calculations of band structure, fraction of light absorbed, and responsivity have been used to analyse structures exhibiting an asymmetric quantum confined Stark effect. The proposed structure, compared with devices following similar modeling approaches, is predicted to exhibit an unbiased responsivity of 0.004 A/W enabling single pixel detection prior to triggering modulation. The calculated photocurrent of $4~\mu $ A offers adequate signal to noise against dark current when operated in a photovoltaic mode. Furthermore, the strong blueshift in the ground state transition energy calculated for the applied field results in extinction ratios in excess of 4dB for the modulated signal. These findings suggest performance enhancements at a fraction of current onboard power consumption in modulating retroreflectors for compact, free-space optical communication platforms.
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用于低功耗自由空间光通信系统的光电调制逆反射器
本文提出了一种 InGaAs-InAsP-GaInP 非对称阶梯量子阱结构,用于入射连续波光信号的无偏检测和后续调制,可应用于紧凑型逆反射自由空间光通信平台。通过仅驱动光激活像素,这种操作大大降低了大面积像素阵列的板载功耗。通过对带状结构、光吸收比例和响应率的计算,我们利用建模程序对表现出非对称量子约束斯塔克效应的结构进行了分析。根据预测,与采用类似建模方法的器件相比,拟议的结构可显示出 0.004 A/W 的无偏响应率,从而在触发调制之前实现单像素检测。计算得出的光电流为 4~\mu $ A,在光电模式下工作时,可提供足够的暗电流信噪比。此外,针对应用场计算出的基态转换能量的强蓝移导致调制信号的消光比超过 4dB。这些发现表明,在用于紧凑型自由空间光通信平台的调制反向反射器中,只需消耗目前板载功耗的一小部分就能提高性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Journal of Quantum Electronics
IEEE Journal of Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.70
自引率
4.00%
发文量
99
审稿时长
3.0 months
期刊介绍: The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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