Photoluminescent Bi-doped CsPbX3 (X: Br, I) perovskite quantum dots for optoelectronic devices

IF 4.1 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Mrs Bulletin Pub Date : 2024-03-19 DOI:10.1557/s43577-024-00675-z

Mabel Rodríguez-Fernández, Saray Gragera, José Carlos Piñero, Rodrigo Alcántara, Javier Navas

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Abstract

Perovskite quantum dots (PQDs) became a hot spot in recent years due to their amazing properties, such as the high photoluminescence quantum yield, tunable emission, and narrow bandwidth being important for their application in different optoelectronic devices. In this work, Bi-doped CsPbBr₃ and Bi-doped CsPbI₃ PQDs were synthesized through the hot-injection method and compared with pristine CsPbBr₃ and CsPbI₃ to analyze the effect of Bi and the halogen on their properties. In addition, all the samples were synthesized at 130°C, 150°C, and 170°C with the aim of analyzing the effect of the temperature. The results showed a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr₃) to 630 nm (Bi-doped CsPbI₃) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi.

Graphical abstract

Impact statement

We believe that the work in this article represents an important advance in the application of perovskite quantum dots in optoelectronics applications, such as in LEDs or lasers. We report here the synthesis and characterization of Bi-doped CsPbX₃ perovskite quantum dots (PQDs), being X: Br and I. These Bi-doped PQDs show a wide range of the emission wavelength from around 500 nm (Bi-doped CsPbBr₃) to 630 nm (Bi-doped CsPbI₃) as a consequence of the effect of the halogen in “X” position and a slight blueshift in the main photoluminescence emission band after doping the pristine quantum dots with Bi. Therefore, they are good candidates to fabricate optoelectronic devices such as LEDs and lasers thanks to their high photoluminescence emission and their tunable emission.

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用于光电设备的光致发光双掺杂 CsPbX3（X：Br，I）包晶量子点

摘要由于具有高光致发光量子产率、可调谐发射和窄带宽等惊人特性，棱镜量子点（PQDs）成为近年来的热点，这对其在不同光电器件中的应用具有重要意义。本研究采用热注入法合成了掺铒 CsPbBr3 和掺铒 CsPbI3 PQDs，并将其与原始 CsPbBr3 和 CsPbI3 进行了比较，以分析 Bi 和卤素对其性能的影响。此外，所有样品都是在 130°C、150°C 和 170°C 下合成的，目的是分析温度的影响。结果表明，由于卤素在 "X "位的影响，发射波长的范围很宽，从500 nm左右（掺Bi的CsPbBr3）到630 nm（掺Bi的CsPbI3），并且在原始量子点中掺入Bi后，主光致发光发射带发生了轻微的蓝移。图解摘要影响声明我们相信，本文的研究工作代表了包晶量子点在光电应用领域（如 LED 或激光器）的重要进展。我们在此报告了双掺杂 CsPbX3 包晶量子点（PQDs）的合成和表征，X：Br 和 I。由于卤素在 "X "位置的影响，这些掺毕的 PQDs 的发射波长范围很宽，从大约 500 纳米（掺毕 CsPbBr3）到 630 纳米（掺毕 CsPbI3）。因此，由于它们的高光致发光发射和可调谐发射，它们是制造 LED 和激光等光电器件的良好候选材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Mrs Bulletin 工程技术-材料科学：综合

CiteScore

7.40

自引率

2.00%

发文量

193

审稿时长

4-8 weeks

期刊介绍： MRS Bulletin is one of the most widely recognized and highly respected publications in advanced materials research. Each month, the Bulletin provides a comprehensive overview of a specific materials theme, along with industry and policy developments, and MRS and materials-community news and events. Written by leading experts, the overview articles are useful references for specialists, but are also presented at a level understandable to a broad scientific audience.