{"title":"Proposed package type for evaluating reliability of HBM Memory","authors":"Dongsoo Lee, G.H. Bae, J.S. Bae, N.H. Lee, Y.S. Lee, S.B. Ko","doi":"10.1016/j.sse.2024.108923","DOIUrl":null,"url":null,"abstract":"<div><p>This paper proposes an experimental package type with a new structure and material that can evaluate the HBM reliability accurately by overcoming the limitations of the previous proxy package.<!--> <!-->This is based on the revision to the package type that reflects the actual user environment which was not applied in the previous type. First,<!--> <!-->side and top EMC were eliminated to enhance the consistency with SIP and the proxy package. Secondly, the Si interposer which is used to connect HBM to PCB was altered from wire bonding to TSV structure.<!--> <!-->Lastly, NCF is changed to Underfill between HBM and the Si Interposer to create an environment identical to that of SIP. Through using this new package type, the failure rate by temperature cycling during 1000 cycles in HBM2E showed 0% from the previous 13%, and that during 2000 cycles in HBM3 showed 0%, and as a result, the HBM memories are well in volume production.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"216 ","pages":"Article 108923"},"PeriodicalIF":1.4000,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000728","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper proposes an experimental package type with a new structure and material that can evaluate the HBM reliability accurately by overcoming the limitations of the previous proxy package. This is based on the revision to the package type that reflects the actual user environment which was not applied in the previous type. First, side and top EMC were eliminated to enhance the consistency with SIP and the proxy package. Secondly, the Si interposer which is used to connect HBM to PCB was altered from wire bonding to TSV structure. Lastly, NCF is changed to Underfill between HBM and the Si Interposer to create an environment identical to that of SIP. Through using this new package type, the failure rate by temperature cycling during 1000 cycles in HBM2E showed 0% from the previous 13%, and that during 2000 cycles in HBM3 showed 0%, and as a result, the HBM memories are well in volume production.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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