{"title":"Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure","authors":"R. Demi̇r, İsmet Kaya","doi":"10.18466/cbayarfbe.1396129","DOIUrl":null,"url":null,"abstract":"We formed a heterojunction structure on a p-C10H10N2 film using n-CdS film. It was found that the forward current-voltage (I-V) characteristic of CdS/C10H10N2 exhibited rectifying behavior with a barrier height value of 0.79 eV and an ideality factor value of 1.93 at room temperature. The Schottky barrier diode formed CdS/C10H10N2 displayed non-ideal current-voltage (I-V) behavior, characterized by 1 ideality factor exceeding one. This deviation can be attributed to factors such as the interface layer, interface states, and series resistance. Moreover, the determination of diode parameters, including ideality factor, barrier height, and series resistance, utilized Cheung's functions and a modified Norde function. The comparison revealed consistent barrier height values across all methods, indicating compatibility. Nevertheless, the series resistance values derived from the Norde function were found to be higher than those obtained from the Cheung functions.","PeriodicalId":9653,"journal":{"name":"Celal Bayar Üniversitesi Fen Bilimleri Dergisi","volume":"143 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Celal Bayar Üniversitesi Fen Bilimleri Dergisi","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.18466/cbayarfbe.1396129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We formed a heterojunction structure on a p-C10H10N2 film using n-CdS film. It was found that the forward current-voltage (I-V) characteristic of CdS/C10H10N2 exhibited rectifying behavior with a barrier height value of 0.79 eV and an ideality factor value of 1.93 at room temperature. The Schottky barrier diode formed CdS/C10H10N2 displayed non-ideal current-voltage (I-V) behavior, characterized by 1 ideality factor exceeding one. This deviation can be attributed to factors such as the interface layer, interface states, and series resistance. Moreover, the determination of diode parameters, including ideality factor, barrier height, and series resistance, utilized Cheung's functions and a modified Norde function. The comparison revealed consistent barrier height values across all methods, indicating compatibility. Nevertheless, the series resistance values derived from the Norde function were found to be higher than those obtained from the Cheung functions.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
