Strain visualization using large-angle convergent-beam electron diffraction

IF 2.1 3区 工程技术 Q2 MICROSCOPY Ultramicroscopy Pub Date : 2024-04-10 DOI:10.1016/j.ultramic.2024.113966
Fumihiko Uesugi , Chiaki Tanii , Naoyuki Sugiyama , Masaki Takeguchi
{"title":"Strain visualization using large-angle convergent-beam electron diffraction","authors":"Fumihiko Uesugi ,&nbsp;Chiaki Tanii ,&nbsp;Naoyuki Sugiyama ,&nbsp;Masaki Takeguchi","doi":"10.1016/j.ultramic.2024.113966","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we report a strain visualization method using large-angle convergent-beam electron diffraction (LACBED).<span><sup>1</sup></span> We compare the proposed method with the strain maps acquired via STEM-NBD, a combination of scanning transmission electron microscopy (STEM) and nanobeam electron diffraction (NBD). Although STEM-NBD can precisely measure the lattice parameters, it requires a large amount of data and personal computer (PC) resources to obtain a two-dimensional strain map. Deficiency lines in the transmitted disk of LACBED reflect the crystalline structure information and move, curve, or disappear in the deformed area. Properly setting the optical conditions makes it possible to acquire real-space images over a broad area in conjunction with deficiency lines on the transmitted disk. The proposed method acquires images by changing the relative position between the specimen and the deficiency line and can grasp the strain information with a small number of images. In addition, the proposed method does not require high-resolution images. It can reduce the required PC memory or storage consumption in comparison with that of STEM-NBD, which requires a high-resolution diffraction pattern (DP) from each point of the region of interest. Compared with the two-dimensional maps of LACBED and NBD, NBD could detect large distortions in the area where the deficiency line curved, moved, or disappeared. The curving or moving direction of the deficiency line is qualitatively consistent with the NBD results. If quantitative strain values are not essential, strain visualization using LACBED can be considered an effective technique. We believe that the strain information of a sample can be obtained effectively using both methods.</p></div>","PeriodicalId":23439,"journal":{"name":"Ultramicroscopy","volume":"261 ","pages":"Article 113966"},"PeriodicalIF":2.1000,"publicationDate":"2024-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ultramicroscopy","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0304399124000457","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MICROSCOPY","Score":null,"Total":0}
引用次数: 0

Abstract

In this study, we report a strain visualization method using large-angle convergent-beam electron diffraction (LACBED).1 We compare the proposed method with the strain maps acquired via STEM-NBD, a combination of scanning transmission electron microscopy (STEM) and nanobeam electron diffraction (NBD). Although STEM-NBD can precisely measure the lattice parameters, it requires a large amount of data and personal computer (PC) resources to obtain a two-dimensional strain map. Deficiency lines in the transmitted disk of LACBED reflect the crystalline structure information and move, curve, or disappear in the deformed area. Properly setting the optical conditions makes it possible to acquire real-space images over a broad area in conjunction with deficiency lines on the transmitted disk. The proposed method acquires images by changing the relative position between the specimen and the deficiency line and can grasp the strain information with a small number of images. In addition, the proposed method does not require high-resolution images. It can reduce the required PC memory or storage consumption in comparison with that of STEM-NBD, which requires a high-resolution diffraction pattern (DP) from each point of the region of interest. Compared with the two-dimensional maps of LACBED and NBD, NBD could detect large distortions in the area where the deficiency line curved, moved, or disappeared. The curving or moving direction of the deficiency line is qualitatively consistent with the NBD results. If quantitative strain values are not essential, strain visualization using LACBED can be considered an effective technique. We believe that the strain information of a sample can be obtained effectively using both methods.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用大角度会聚束电子衍射实现应变可视化
在本研究中,我们报告了一种利用大角度汇聚束电子衍射(LACBED)的应变可视化方法1 。我们将所提出的方法与通过 STEM-NBD (扫描透射电子显微镜(STEM)和纳米束电子衍射(NBD)的组合)获得的应变图进行了比较。虽然 STEM-NBD 可以精确测量晶格参数,但它需要大量数据和个人计算机(PC)资源才能获得二维应变图。LACBED 透射盘中的缺陷线反映了晶体结构信息,并在变形区域移动、弯曲或消失。通过适当设置光学条件,可以结合透射盘上的缺陷线获取大范围的实空间图像。建议的方法通过改变试样与缺损线之间的相对位置来获取图像,只需少量图像即可掌握应变信息。此外,建议的方法不需要高分辨率图像。与需要从感兴趣区域的每个点获取高分辨率衍射图样(DP)的 STEM-NBD 相比,它可以减少所需的 PC 内存或存储消耗。与 LACBED 和 NBD 的二维地图相比,NBD 可以检测到缺陷线弯曲、移动或消失区域的大变形。缺陷线的弯曲或移动方向与 NBD 的结果在性质上是一致的。如果定量应变值不是必需的,使用 LACBED 进行应变可视化也不失为一种有效的技术。我们相信,使用这两种方法都能有效地获得样品的应变信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Ultramicroscopy
Ultramicroscopy 工程技术-显微镜技术
CiteScore
4.60
自引率
13.60%
发文量
117
审稿时长
5.3 months
期刊介绍: Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.
期刊最新文献
Direct electron detection for EBSD of low symmetry & beam sensitive ceramics Editorial Board Chinese knot inspired isotropic linear scanning method for improved imaging performance in AFM Toward quantitative thermoelectric characterization of (nano)materials by in-situ transmission electron microscopy New experimental methodology for determining the second crossover energy in insulators under stationary e-irradiation in a SEM
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1