Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations

Abstract

As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted interest because Ge provides larger carrier mobility and is advantageous for high-speed switching. In this study, the silicon-germanium (SiGe) ultrashort-gate transistor performances were studied using electrical-thermal analysis. The material properties of SiGe can be modified by regulating the mole fraction in Si $_{1-x}$ Ge $_{x}$ , and the different material characteristics affect the nanoscale transistor performance because channel regulation strongly depends on the bandgap energy. This study aims to reveal the structural and material designs of SiGe transistors to ensure sufficient performance and reliability.