Tian Luo, Zhehan Yu, Yijun Dai, Sitong Chen, Fang Ye, Wei Xu, Jichun Ye, Wei Guo
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Abstract
Reducing off‐state and gate leakage current is crucial in the development of metal‐insulator‐semiconductor high‐electron‐mobility‐transistors (MIS‐HEMTs). This work reports interface engineering in the gate recess region through low‐damage digital etching during the fabrication of normally‐off GaN MIS‐HEMTs. Conventional plasma etching leads to a reduction of the N/(Al+Ga) ratio, but this value recovered to almost 1 with optimized oxidation condition during digital etching, suggesting a reduction of the Al/Ga dangling bonds based on the proposed technique. GaN MIS‐HEMTs with digital etching exhibits a threshold voltage of 1.0 V at 1 µA/mm, a high ON/OFF current ratio of 1010, a gate breakdown voltage of 22 V, and a low gate leakage current of 10‐8 mA/mm.This article is protected by copyright. All rights reserved.
期刊介绍：
Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers.
The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.
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