Darsith Jayachandran, Najam U Sakib, Saptarshi Das
{"title":"3D integration of 2D electronics","authors":"Darsith Jayachandran, Najam U Sakib, Saptarshi Das","doi":"10.1038/s44287-024-00038-5","DOIUrl":null,"url":null,"abstract":"The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.","PeriodicalId":501701,"journal":{"name":"Nature Reviews Electrical Engineering","volume":"1 5","pages":"300-316"},"PeriodicalIF":0.0000,"publicationDate":"2024-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44287-024-00038-5.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature Reviews Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44287-024-00038-5","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory technology, and a similar transformative potential exists for logic circuits, by stacking transistors into the third dimension. This pivotal shift towards 3D integration of logic arrives on the heels of substantial improvements in silicon device structures and their subsequent scaling in size and performance. Yet, advanced scaling requires ultrathin semiconducting channels, which are difficult to achieve using silicon. In this context, field-effect transistors based on two-dimensional (2D) semiconductors have drawn notable attention owing to their atomically thin nature and impressive performance milestones. In addition, 2D materials offer a broader spectrum of functionalities — such as optical, chemical and biological sensing — that extends their utility beyond simple ‘more Moore’ dimensional scaling and enables the development of ‘more than Moore’ technologies. Thus, 3D integration of 2D electronics could bring us unanticipated discoveries, leading to sustainable and energy-efficient computing systems. In this Review, we explore the progress, challenges and future opportunities for 3D integration of 2D electronics. Since the most advanced nodes in silicon are reaching the limits of planar integration, 2D materials could help to advance the semiconductor industry. With the potential for use in multifunctional chips, 2D materials offer combined logic, memory and sensing in integrated 3D chips.