{"title":"Detailed analysis of the capacitance characteristic measured using the pseudo-metal–oxide–semiconductor method","authors":"Shingo Sato , Yifan Yuan","doi":"10.1016/j.sse.2024.108950","DOIUrl":null,"url":null,"abstract":"<div><p>This paper discusses the capacitance–voltage (C–V) characteristics of a silicon-on-insulator (SOI) wafer obtained using the alternating current (AC) pseudo-metal–oxide–semiconductor (MOS) method. This study clarified that the C–V characteristics measured using the standard configuration of the AC pseudo-MOS method were strongly ruled by the condition of both the top and back contacts. Using a distinctive setup referred to as the Kelvin AC pseudo-MOS method, coupled with specific treatments applied to the wafer, we acquired C–V and impedance-related characteristics that differed from the standard configuration and aligned with the theoretical expectation for the entire range of measurement frequencies below a few megahertz. In addition, this study demonstrated the qualitative behavior of the frequency-dependent capacitance with the channel conduction of carriers using an analytical model.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"217 ","pages":"Article 108950"},"PeriodicalIF":1.4000,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000996","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper discusses the capacitance–voltage (C–V) characteristics of a silicon-on-insulator (SOI) wafer obtained using the alternating current (AC) pseudo-metal–oxide–semiconductor (MOS) method. This study clarified that the C–V characteristics measured using the standard configuration of the AC pseudo-MOS method were strongly ruled by the condition of both the top and back contacts. Using a distinctive setup referred to as the Kelvin AC pseudo-MOS method, coupled with specific treatments applied to the wafer, we acquired C–V and impedance-related characteristics that differed from the standard configuration and aligned with the theoretical expectation for the entire range of measurement frequencies below a few megahertz. In addition, this study demonstrated the qualitative behavior of the frequency-dependent capacitance with the channel conduction of carriers using an analytical model.
本文讨论了使用交流伪金属氧化物半导体（MOS）方法获得的绝缘体上硅（SOI）晶片的电容-电压（C-V）特性。这项研究表明，使用交流伪 MOS 方法的标准配置测量的 C-V 特性受到顶面和背面触点条件的很大影响。我们使用了一种称为开尔文交流伪 MOS 方法的独特设置，并对晶片进行了特殊处理，从而获得了不同于标准配置的 C-V 和阻抗相关特性，并在低于几兆赫兹的整个测量频率范围内符合理论预期。此外，这项研究还利用分析模型证明了频率相关电容与载流子沟道传导的定性行为。
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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