Quantification of Si Dopant in β-Ga2O3-Based Semiconductor Gas Sensors by Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)

IF 0.9 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Inorganic Materials Pub Date : 2024-03-20 DOI:10.1134/s0020168523140066

D. G. Filatova, A. P. Bogdanova, V. V. Krivetskiy, T. N. Penkina, M. N. Rumyantseva

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Abstract

The development of chemical sensors is relevant for solving environmental problems of monitoring the atmosphere of cities and industrial zones. Semiconductor sensors based on metal oxides are promising chemical gas sensors owing to their high sensitivity, low cost, small size, and low energy consumption. The first attempts at pilot operation of atmospheric air monitoring systems based on such sensors revealed insufficient response stability. Doping of the basic material with silicon can solve the problem. At the same time, data on the amount and distribution of the dopant in the material are necessary to determine the relationship “synthesis conditions–composition–properties.” We propose an approach to the determination of the composition of novel semiconductor materials based on β-Ga₂O₃ with a silicon dopant content from 0.5 to 2 at %. The approach included grinding of samples using a planetary mill and preparation of suspensions in ethylene glycol, followed by TXRF determination of the analytes on sapphire substrates using the method of absolute contents (Si) with S_r of 0.08 and the method of external standard (Ga) with S_r of 0.04. X-ray fluorescence analysis of the samples was performed using an S2 PICOFOX spectrometer (Bruker Nano GmbH, Germany). MoK_α radiation was used to excite X-ray fluorescence. The spectrum acquisition time was 250 s. It is shown that the homogeneity of the dopant distribution in the material can be estimated using the analysis of the suspensions. The studied materials demonstrate an irreproducible sensory response which we associate with the revealed inhomogeneity of the silicon distribution over the surface of β-Ga₂O₃.

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利用全反射 X 射线荧光光谱法 (TXRF) 量化基于 β-Ga2O3 的半导体气体传感器中的硅掺杂物

摘要化学传感器的开发对于解决城市和工业区大气监测方面的环境问题具有重要意义。基于金属氧化物的半导体传感器具有灵敏度高、成本低、体积小和能耗低等优点，是一种很有前途的化学气体传感器。基于此类传感器的大气空气监测系统的首次试运行表明，其响应稳定性不足。在基本材料中掺入硅可以解决这个问题。与此同时，要确定 "合成条件-成分-特性 "之间的关系，就必须获得材料中掺杂剂的数量和分布数据。我们提出了一种测定新型半导体材料成分的方法，这种材料基于硅掺杂含量为 0.5% 至 2% 的 β-Ga2O3。该方法包括使用行星式研磨机研磨样品并在乙二醇中制备悬浮液，然后使用绝对含量法（Si）（Sr 为 0.08）和外标法（Ga）（Sr 为 0.04）在蓝宝石基底上对分析物进行 TXRF 测定。样品的 X 射线荧光分析是使用 S2 PICOFOX 光谱仪（德国布鲁克纳米公司）进行的。MoKα 辐射用于激发 X 射线荧光。光谱采集时间为 250 秒。结果表明，材料中掺杂剂分布的均匀性可以通过悬浮液的分析来估算。所研究的材料表现出不可再现的感官反应，这与我们发现的硅在β-Ga2O3 表面分布的不均匀性有关。

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来源期刊

Inorganic Materials 工程技术-材料科学：综合

CiteScore

1.40

自引率

25.00%

发文量

审稿时长

3-6 weeks

期刊介绍： Inorganic Materials is a journal that publishes reviews and original articles devoted to chemistry, physics, and applications of various inorganic materials including high-purity substances and materials. The journal discusses phase equilibria, including P–T–X diagrams, and the fundamentals of inorganic materials science, which determines preparatory conditions for compounds of various compositions with specified deviations from stoichiometry. Inorganic Materials is a multidisciplinary journal covering all classes of inorganic materials. The journal welcomes manuscripts from all countries in the English or Russian language.