{"title":"Characterization of Polish-Induced Gouges on Single Crystal Sapphire Substrates","authors":"Jinhyung Lee, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Prajeen Dumbare and Kannan Balasundaram","doi":"10.1149/2162-8777/ad4675","DOIUrl":null,"url":null,"abstract":"Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"25 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Journal of Solid State Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1149/2162-8777/ad4675","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.
众所周知,单晶蓝宝石是最坚硬的绝缘体之一。其机械特性和化学惰性使其成为一种难以抛光的材料,难以达到其应用所需的原子级表面光滑度。使用金刚石磨料进行机械抛光的去除率很高,但会产生无法接受的抛光沟痕。另一方面,化学机械抛光可获得原子级的光滑度,但过程缓慢。因此,工业界将这两种方法结合起来使用。在这项工作中,我们尝试使用原子力显微镜、X 射线衍射和横截面透射电子显微镜,对金刚石研磨机械抛光和胶体二氧化硅化学机械抛光引起的 C 平面和 A 平面蓝宝石的开槽和次表面损伤进行表征。亮点 蓝宝石(α-Al2O3)两种取向/平面的化学机械抛光/平面化。表征抛光引起的沟纹--测量沟纹深度。生长外延层、显示器、可穿戴电子设备的窗口等。使用 TEM、XRD 和 AFM 对蓝宝石表面进行表征 - 结果量化。利用 X 射线摇摆曲线确定晶体表面质量。
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.