Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

IF 1.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY ECS Journal of Solid State Science and Technology Pub Date : 2024-05-14 DOI:10.1149/2162-8777/ad46f0
Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien
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Abstract

We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.
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原子尺度掺杂铪以强化锗 P 型金属氧化物半导体场效应晶体管栅极堆栈的氧化锗界面层
我们开发了一种方法,利用半周期 Hf 前驱体吸附,通过原位等离子体增强原子层沉积,对基于 Hf 的栅极堆栈的 GeO2 IL 进行微量掺杂。这种技术能有效减少 GeO 的气化,提高 GeO2 层的热稳定性。我们的研究结果表明,将 Hf 微妙地引入 GeO2 层后,在较高温度下的累积电容(Cacc)在电容-电压(CV)曲线上没有明显的增加。根据 X 射线光电子能谱的 Ge 3d 光谱,我们发现 IL 有来自额外 Hf-O 键的信号;因此,我们得出结论:加入 Hf 可以大大抑制 GeO 蒸发。因此,在 GeOx IL 中加入金属形成 HfGeOx 后,在 500 °C 的 PMA 温度下,漏电流明显降低到 9 × 10-5 A cm-2,界面阱密度 (Dit) 最低,约为 2 × 1011 eV-1 cm-2。此外,在器件制造过程中应用这种栅极堆栈结构还能显著降低关态漏电流,提高有效峰值空穴迁移率。
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来源期刊
ECS Journal of Solid State Science and Technology
ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
CiteScore
4.50
自引率
13.60%
发文量
455
期刊介绍: The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.
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