Nehru Devabharathi, Sandeep Yadav, Inga Dönges, Vanessa Trouillet, Jörg J. Schneider
{"title":"α-TeO2 Oxide as Transparent p-Type Semiconductor for Low Temperature Processed Thin Film Transistor Devices (Adv. Mater. Interfaces 16/2024)","authors":"Nehru Devabharathi, Sandeep Yadav, Inga Dönges, Vanessa Trouillet, Jörg J. Schneider","doi":"10.1002/admi.202470041","DOIUrl":null,"url":null,"abstract":"<p><b><i>p</i>-Type Semiconductor</b></p><p><i>P</i>-type oxide semiconducting materials processable at or slightly above room temperature are still rare. Notably, a 5 nm <i>α</i>-TeO<sub>2</sub> thin film represents such an electronically active material and can be gas phase deposited into a thin film transistor device architecture. Nature sometimes creates it as para tellurite polymorph in beautiful single crystals as found in the Bambollita mine, Moctezuma, Sonora, Mexico. More details can be found in article number 2301082 by Jörg J. Schneider and co-workers. Cover image by Dr. S. Okeil. We thank Borja Sainz de Baranda Graf for the image of the crystal.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202470041","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202470041","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
p-Type Semiconductor
P-type oxide semiconducting materials processable at or slightly above room temperature are still rare. Notably, a 5 nm α-TeO2 thin film represents such an electronically active material and can be gas phase deposited into a thin film transistor device architecture. Nature sometimes creates it as para tellurite polymorph in beautiful single crystals as found in the Bambollita mine, Moctezuma, Sonora, Mexico. More details can be found in article number 2301082 by Jörg J. Schneider and co-workers. Cover image by Dr. S. Okeil. We thank Borja Sainz de Baranda Graf for the image of the crystal.
期刊介绍：
Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018.
The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface.
Advanced Materials Interfaces covers all topics in interface-related research:
Oil / water separation,
Applications of nanostructured materials,
2D materials and heterostructures,
Surfaces and interfaces in organic electronic devices,
Catalysis and membranes,
Self-assembly and nanopatterned surfaces,
Composite and coating materials,
Biointerfaces for technical and medical applications.
Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
