{"title":"High-efficiency silicon modulator of horizontal S-shaped profile","authors":"Zijian Zhu, Ying Zhao, Fuwan Gan","doi":"10.1117/12.3031892","DOIUrl":null,"url":null,"abstract":"Silicon modulators, which play a crucial role in silicon photonics systems, are currently trending towards lower biases and improved bandwidth. The plasma dispersion effect of silicon modulators highlights the importance of carrier concentration in improving performance. Common doping profiles have been optimized for high efficiency but may suffer from increased loss. Our horizontal S-shaped modulator improves silicon modulators with excellent VπL of 0.77 V·cm and low loss of 10.9 dB/cm, with small resistance and capacitance enhancing bandwidth over 27 GHz. This design is suitable for high-speed and low-voltage applications with benefits of saving power.","PeriodicalId":342847,"journal":{"name":"International Conference on Algorithms, Microchips and Network Applications","volume":"215 ","pages":"131710V - 131710V-6"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Algorithms, Microchips and Network Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.3031892","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon modulators, which play a crucial role in silicon photonics systems, are currently trending towards lower biases and improved bandwidth. The plasma dispersion effect of silicon modulators highlights the importance of carrier concentration in improving performance. Common doping profiles have been optimized for high efficiency but may suffer from increased loss. Our horizontal S-shaped modulator improves silicon modulators with excellent VπL of 0.77 V·cm and low loss of 10.9 dB/cm, with small resistance and capacitance enhancing bandwidth over 27 GHz. This design is suitable for high-speed and low-voltage applications with benefits of saving power.
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