Hydrogen detector in Kretschmann configuration based on an inorganic perovskite

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-06-05 DOI:10.1007/s10825-024-02171-8
Qihui Ye, Gang Song
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Abstract

We theoretically investigate a hydrogen (H\(_2\)) detector in a plasmonic structure involving an inorganic perovskite. The structure is composed of a prism, a silver layer, a perovskite layer (CsPbBr\(_3\)), and a palladium layer (Pd). The palladium layer absorbs H2, which transforms it into a Pd-H layer. Due to the large difference in dielectric constants between Pd and Pd-H, the reflection versus the incident angle \(\theta\) exhibits great differences (\(\Delta R\)) between the structures with a Pd layer and with a Pd-H layer. Our calculation results show that the working wavelength has a substantial impact on \(\Delta R\). The working wavelength not only affects the dielectric constants of the materials in our structure, but also influences the skin depth of surface plasmon polaritons (SPPs) in the CsPbBr\(_3\) layer, which couple with the Pd or Pd-H layers. A long working wavelength provides a longer skin depth, which couples more energy of the SPPs with the Pd or Pd-H layers. With an increase in Ag layer thickness, the dissipation of our proposed structure reduces the maximum value of \(\Delta R\). According to our calculations, there is an optimal thickness of the CsPbBr\(_3\) layer for which the value of \(\Delta R\) is the largest. The results show the competition between the coupling and the dissipation of the SPP intensity along the direction perpendicular to the layers in the CsPbBr\(_3\) layer. At certain conditions, \(\Delta R\) reaches a value of 0.13, which is about 20% of the reflection value. The detector we designed demonstrates good performance, with many potential applications.

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基于无机过氧化物的克雷奇曼构型氢探测器
我们从理论上研究了无机包晶体等离子体结构中的氢(H/(_2/))探测器。该结构由棱镜、银层、包晶石层(CsPbBr\(_3\) )和钯层(Pd)组成。钯层吸收 H2,转化为 Pd-H 层。由于 Pd 和 Pd-H 之间的介电常数相差很大,有 Pd 层的结构和有 Pd-H 层的结构之间的反射与入射角 \(\theta\) 的关系表现出很大的差异(\(\△R\))。我们的计算结果表明,工作波长对 \(\Delta R\) 有很大的影响。工作波长不仅会影响结构中材料的介电常数,还会影响与 Pd 或 Pd-H 层耦合的 CsPbBr(_3\)层中表面等离子体极化子(SPPs)的皮深。长工作波长可提供更长的皮层深度,从而将更多的 SPPs 能量与 Pd 或 Pd-H 层耦合。随着Ag层厚度的增加,我们提出的结构的耗散会降低\(\Delta R\)的最大值。根据我们的计算,CsPbBr(_3\)层存在一个最佳厚度,在这个厚度上,\(\Delta R\ )值最大。结果显示了沿垂直于 CsPbBr(_3)层方向的 SPP 强度的耦合和耗散之间的竞争。在特定条件下,\(\Delta R\) 的值达到了 0.13,约为反射值的 20%。我们设计的探测器性能良好,有许多潜在的应用领域。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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