Artificial synapses based on P(VDF-TrFE-CTFE)/sodium alginate heterojunction memristor for distance detection application

Abstract

The utilization of heterogeneous architecture presents a promising approach to bolster the reliability of memristors and achieve high-density memory with synaptic properties. The preparation of P(VDF-TrFE-CTFE)/sodium alginate heterojunction memristors was accomplished through the rotary coating method. The investigation was conducted on the electrical properties and synaptic behavior of the heterojunction memristors. The memristor exhibits the potential to emulate crucial synaptic behaviors, such as paired-pulse facilitation, long-term potentiation, long-term depression, excited postsynaptic current and inhibitory postsynaptic current, as well as learning behavior. This highlights its prospective applicability in neuromorphic devices. A distance sensing system is established utilizing the P(VDF-TrFE-CTFE)/sodium alginate heterojunction memristor artificial synaptic device in conjunction with the Al/sodium alginate/ITO threshold memristor artificial neuron. The detection of distance is achieved through the transmission of signals from the synaptic device and triggering of thresholds in the threshold device. This system enables distance detection ranging from 0.5 cm to 14 cm. This research is crucial for advancing the development of biomimetic sensing systems and facilitating the utilization of memristors in the field of sensing.