A critical review on the fracture of ultra-thin photovoltaics silicon wafers

IF 6.3 2区 材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2024-06-19 DOI:10.1016/j.solmat.2024.112999
Dameng Cheng, Yufei Gao
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Abstract

Silicon-based solar photovoltaics cells are an important way to utilize solar energy. Diamond wire slicing technology is the main method for producing solar photovoltaics cell substrates. In order to reduce production costs and improve the production efficiency, the solar photovoltaics cell substrates silicon wafers are developing in the direction of large size and ultra-thin, and the diamond wire slicing technology is developing in the direction of high wire speed and fine wire diameter. These aspects cause an increase in the fracture probability of silicon wafer during the processing and increase costs. In this paper, a comprehensive review has been conducted on silicon wafer fracture with the latest research. Firstly, the strength characteristics of ideal crystalline silicon are summarized and discussed. The ideal crystalline silicon has a large mechanical strength, and the tensile strength in the non-dissociation direction is more than 10 GPa, while the fracture strength of silicon wafers is only 100 MPa–500 MPa. This is because there is subsurface damage on the wafers during slicing processing. Then the testing methods and statistical methods of silicon wafer fracture strength are introduced. The testing methods mainly include 3-point bending test, 4-point bending test, and biaxial bending test. Collecting load-displacement data during bending test can further calculate the fracture stress of silicon wafers through linear stress analytical formulas and finite element methods. Then, the Weibull function is used for statistical analysis to obtain the fracture strength of the silicon wafer. Finally, the research literatures on the theoretical modeling of silicon wafer fracture strength and the calculation model of silicon wafer fracture probability under different load conditions are introduced. This review contributes to a comprehensive understanding of the mechanical strength degradation and fracture mechanism of silicon wafers, and provides critical insights for future research interests.

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关于超薄光伏硅晶片断裂的重要评论
硅基太阳能光伏电池是利用太阳能的一种重要方式。金刚石线切片技术是生产太阳能光伏电池衬底的主要方法。为了降低生产成本,提高生产效率,太阳能光伏电池衬底硅片向大尺寸、超薄化方向发展,金刚石线切片技术向高线速、细线径方向发展。这些方面都导致硅片在加工过程中的断裂概率增加,成本增加。本文结合最新研究,对硅片断裂进行了全面综述。首先,总结并讨论了理想晶体硅的强度特性。理想晶体硅具有较大的机械强度,非解离方向的拉伸强度大于 10 GPa,而硅片的断裂强度仅为 100 MPa-500 MPa。这是因为硅片在切片加工过程中存在次表面损伤。然后介绍了硅片断裂强度的测试方法和统计方法。测试方法主要包括三点弯曲测试、四点弯曲测试和双轴弯曲测试。通过收集弯曲试验中的载荷-位移数据,可以进一步通过线性应力解析公式和有限元方法计算硅片的断裂应力。然后,利用 Weibull 函数进行统计分析,得出硅片的断裂强度。最后,介绍了硅片断裂强度理论建模和不同载荷条件下硅片断裂概率计算模型的研究文献。本综述有助于全面了解硅片的机械强度退化和断裂机理,并为今后的研究兴趣提供重要启示。
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来源期刊
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells 工程技术-材料科学:综合
CiteScore
12.60
自引率
11.60%
发文量
513
审稿时长
47 days
期刊介绍: Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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