{"title":"Determination of source series resistances for InP HEMT under normal bias condition","authors":"Ao Zhang , Jianjun Gao","doi":"10.1016/j.sse.2024.108975","DOIUrl":null,"url":null,"abstract":"<div><p>A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"219 ","pages":"Article 108975"},"PeriodicalIF":1.4000,"publicationDate":"2024-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001242","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
A novel approach to determine the source series resistance for InP HEMT device, which combines the DC characteristics measurement and S-parameters measurement under normal bias condition is developed in this paper. Three HEMT devices with different gatewidth have been used to verify the validity of the method, and good agreement is obtained between modeled and measured S-parameters and noise parameters.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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