Study of ISFET for KCl sensing

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-06-21 DOI:10.1016/j.sse.2024.108974

Pedro H. Duarte , Ricardo C. Rangel , Katia R.A. Sasaki , Joao A. Martino

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Abstract

This work presents the fabrication and electrical characterization of the Ion Sensitive Field Effect Transistor (ISFET) exposed to potassium chloride (KCl) solutions. The focus of the study is to compare two measurements methods and verify the effects of these methods in the device threshold voltage (V_TH) sensitivity to the different KCl concentrations. First, a reference electrode (a platinum needle) is placed in the sample solution over the gate area of the device, demonstrating that the threshold voltage decreases with the increase of the KCl concentration. The method shows a sensitivity of 10.44 mV/mM for the low KCl concentration range (0 to 10 mM) and 0.5 mV/mM for the higher KCl concentration range (10 to 100 mM). The second method involves inserting a second platinum electrode into the solution on the field oxide. This method proposes the KCl electrolysis to increase the selectivity for potassium ions. The result allows the next steps for potassium sensing biosensor application with selective membranes.

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用于氯化钾传感的 ISFET 研究

这项研究介绍了暴露在氯化钾（KCl）溶液中的离子敏感场效应晶体管（ISFET）的制造和电气特性分析。研究的重点是比较两种测量方法，并验证这些方法对器件阈值电压（VTH）对不同氯化钾浓度的敏感性的影响。首先，在器件栅极区域的样品溶液中放置一个参比电极（铂针），证明阈值电压会随着 KCl 浓度的增加而降低。该方法显示，低 KCl 浓度范围（0 至 10 mM）的灵敏度为 10.44 mV/mM，高 KCl 浓度范围（10 至 100 mM）的灵敏度为 0.5 mV/mM。第二种方法是在场强氧化物上的溶液中插入第二个铂电极。这种方法建议使用 KCl 电解来提高对钾离子的选择性。这一结果为下一步利用选择性膜应用钾传感生物传感器提供了可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.