Improved Ga2O3 films on variously oriented Si substrates with Al2O3 or HfO2 buffer layer via atomic layer deposition

IF 2.7 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2024-06-25 DOI:10.1016/j.micrna.2024.207925
Xiangtai Liu, Jiayang Wang, Zhitian Xu, Shaoqing Wang, Yifan Jia, Qin Lu, Zhan Wang, Yunhe Guan, Lijun Li, Haifeng Chen
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Abstract

Ga2O3 is an ultrawide-band-gap semiconductor with excellent properties and promising applications in the electronic and optoelectronics. For acting as the substrate for heteroepitaxial Ga2O3 films, Si has the advantages of wafer-level size, cheap price and nice compatibility whereas also perform the disadvantage of large thermal mismatch. In this paper, the apparent flower-like defects are exhibited on the macroscopic surfaces of annealed Ga2O3 films deposited on (100), (110) and (111) oriented Si substrates by atomic layer deposition (ALD) method. The reason is ascribed to the different thermal expansion coefficients between Ga2O3 and Si induced compressive and tensile stresses. The Al2O3 or HfO2 buffer layer intercalated between Ga2O3 films and Si substrates via successive ALD process suppress the flower-like defects effectively while the surface roughnesses are low to be 1.290 nm and 2.393 nm, respectively. XRD spectra demonstrate that buffer layer indeed relieves the stress of Ga2O3 films on Si substrates while the amorphous Al2O3 has better influence than the polycrystalline HfO2. The results are helpful to the improvement of growth quality and device property of Ga2O3.

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通过原子层沉积在带有 Al2O3 或 HfO2 缓冲层的不同取向硅基底上制备改良型 Ga2O3 薄膜
Ga2O3 是一种超宽带隙半导体,具有优异的性能,在电子和光电子领域有着广阔的应用前景。硅作为异质外延 Ga2O3 薄膜的衬底,具有晶圆级尺寸、价格便宜、兼容性好等优点,但也存在热失配大的缺点。本文采用原子层沉积(ALD)方法,在(100)、(110)和(111)取向硅衬底上沉积的退火 Ga2O3 薄膜的宏观表面出现了明显的花状缺陷。其原因是 Ga2O3 和硅之间不同的热膨胀系数引起了压应力和拉应力。通过连续的 ALD 工艺,在 Ga2O3 薄膜和硅基底之间夹杂的 Al2O3 或 HfO2 缓冲层有效地抑制了花状缺陷,而表面粗糙度分别低至 1.290 nm 和 2.393 nm。XRD 光谱表明,缓冲层确实缓解了硅衬底上 Ga2O3 薄膜的应力,而非晶 Al2O3 比多晶 HfO2 有更好的影响。这些结果有助于提高 Ga2O3 的生长质量和器件性能。
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