The effects of processing technique on formation temperature of calcium aluminate magnesium (CaO.2MgO.8Al2O3)

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-06-20 DOI:10.1016/j.jcrysgro.2024.127797
Sahar Sajjadi Milani, Mahdi Ghassemi Kakroudi, Mohammad Rezvani
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Abstract

This study aims at the synthesis of a ternary phase crystal CaO.2MgO.8Al2O3 (CM2A8) in the Al-rich part of the ternary system CaO-Al2O3-MgO through two techniques: (1) sol–gel citrate and (2) solid-state reaction. Based on the measurement of particle size, density, phase analysis, nature of bounds, and microscopic observation, the effect of the processing technique on the crystal purity, crystallite size, and synthesis temperature of the as-prepared CM2A8 powder was investigated. Phases analysis (XRD patterns) showed in the sol–gel citrate combustion method almost a single-phase material (calcium aluminate magnesium phases) at relatively lower temperatures while in the solid-state method as-prepared CM2A8 powder with a small amount of spinel (MgAl2O4 = MA) and calcium hexaaluminate (CaAl12O19 = CA6) secondary phases. The generated heat through the combustion of the reaction of ammonium nitrate and citrate-based complexes decreases the synthesis temperature of nanocrystalline CM2A8, and the CM2A8 phase is formed at a temperature of 1400 °C. While growth mechanism in the solid-state reaction method adheres to the two-dimensional nucleation theory and a thick hexagonal flake known as CM2A8 is produced at a temperature of 1700 °C. In comparison with the crystals synthesized by the solid-state reaction method, the powder density of the nanocrystals synthesized by a sol–gel combustion method exhibits higher values (3.54 g.cm−3 and 3.65 g.cm−3, respectively). Peak intensities in the 400–1000 cm−1 range, according to FTIR measurements, correspond to metal–oxygen–metal (M–O–M) bonds (vibrations of Al–O stretching in Mg–O–Al and Ca–O–Al), and they grow as the temperature rises from 200 °C to 1400 °C, indicating that CM2A8 was the crystal that was formed. The morphological analysis (FESEM) revealed that most of the agglomerate particles synthesized by the sol–gel citrate combustion remained within the range of 50–83 nm, while the particles synthesized by the had particles as 1 μm. The specific surface area synthesized CM2A8 via the sol–gel method is in the range of 10–24 m2/g. The main advantages of the sol–gel citrate process are the high purity of the product, the narrow particle size distribution, and the achievement of uniform nanostructure at low temperatures.

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加工技术对铝酸钙镁(CaO.2MgO.8Al2O3)形成温度的影响
本研究旨在通过(1)溶胶-凝胶柠檬酸盐和(2)固态反应两种技术合成 CaO-Al2O3-MgO 三元体系富铝部分的三元相晶体 CaO.2MgO.8Al2O3(CM2A8)。在测量粒度、密度、相分析、边界性质和显微观察的基础上,研究了加工技术对制备的 CM2A8 粉末的晶体纯度、晶粒尺寸和合成温度的影响。相分析(XRD 图谱)显示,在溶胶-凝胶柠檬酸盐燃烧法中,在相对较低的温度下几乎是单相材料(钙铝酸盐镁相),而在固态法中,制备的 CM2A8 粉末含有少量尖晶石(MgAl2O4 = MA)和六铝酸钙(CaAl12O19 = CA6)次生相。硝酸铵和柠檬酸基络合物反应燃烧产生的热量降低了纳米晶 CM2A8 的合成温度,CM2A8 相在 1400 ℃ 的温度下形成。固态反应法的生长机理遵循二维成核理论,在 1700 ℃ 的温度下生成了被称为 CM2A8 的厚六边形薄片。与固态反应法合成的晶体相比,溶胶-凝胶燃烧法合成的纳米晶体的粉末密度值更高(分别为 3.54 g.cm-3 和 3.65 g.cm-3)。根据傅立叶变换红外光谱测量,400-1000 cm-1 范围内的峰强度对应于金属-氧-金属(M-O-M)键(Mg-O-Al 和 Ca-O-Al 中 Al-O 的伸展振动),它们随着温度从 200 °C 升至 1400 °C 而增长,表明形成的晶体是 CM2A8。形态分析(FESEM)显示,溶胶-凝胶柠檬酸盐燃烧法合成的团聚颗粒大部分保持在 50-83 nm 的范围内,而合成法合成的颗粒为 1 μm。通过溶胶-凝胶法合成的 CM2A8 的比表面积在 10-24 m2/g 之间。溶胶-凝胶柠檬酸盐工艺的主要优点是产品纯度高、粒度分布窄、可在低温下获得均匀的纳米结构。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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