A composite model of memristors based on barrier and dopant drift mechanisms

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-07-14 DOI:10.1016/j.sse.2024.108990
Jiangfeng Yu , Ruifan Yang , Yuan Liu , Wanling Deng
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Abstract

This paper presents a hybrid model for TiO2-based memristors, integrating the dopant drift mechanism with the Schottky barrier theory. We introduce the movement of oxygen vacancies as a dynamic variable to modulate changes in memristors. Furthermore, the variation of the dominate mechanism of the TiO2 memristors under different operating conditions is studied, which is related to the position of the internal oxygen vacancy. The proposed model accurately captures the rectification linearity, and effectively elucidates the dominant current mechanisms manifested in six distinct regions of the I-V curves. Our model exhibits better predication with reduced errors when applied to Pt/TiO2/Pt memristors. The proposed model can well describe the dual-mechanism memristor phenomenon, and provides a reference for the subsequent study of multi-mechanism behavior in memristors.

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基于势垒和掺杂漂移机制的忆阻器复合模型
本文结合掺杂漂移机制和肖特基势垒理论,为基于二氧化钛的忆阻器提出了一个混合模型。我们引入了氧空位的移动作为动态变量来调节忆阻器的变化。此外,我们还研究了不同工作条件下二氧化钛忆阻器主导机制的变化,这与内部氧空位的位置有关。所提出的模型准确地捕捉到了整流线性,并有效地阐明了 I-V 曲线上六个不同区域的主导电流机制。在应用于铂/二氧化钛/铂记忆晶闸管时,我们的模型具有更好的预测性,误差更小。所提出的模型能很好地描述双机制忆阻器现象,为后续研究忆阻器的多机制行为提供了参考。
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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