A transient-enhanced output-capacitorless LDO regulator with non-inverting pull–push gain stage

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-18 DOI:10.1016/j.mejo.2024.106299
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Abstract

A novel non-inverting pull–push gain stage output-capacitorless low-dropout regulator (OCL-LDO) is introduced, designed specifically for power management of system-on-chip (SoC). The incorporation of an innovative non-inverting gain stage (NIGS) serves to shift the non-dominant parasitic poles to higher frequencies, thereby enhancing the overall stability of the system. The proposed pull-push configuration markedly improves the slew rate limitation at the gate of the power transistor. Post-layout simulation outcomes, corroborated through a 180-nm CMOS fabrication process, indicate that the proposed LDO regulator maintains stability across a wide range of loading currents, from 0 mA to 100 mA, with a Miller compensation capacitance of only 3.5 pF. The circuit operates with a quiescent current of 143 μA when powered by a 1.5 V single supply. The LDO regulator boasts a dropout voltage of 300 mV, enabling it to deliver up to 100 mA of load current. Simulation results show that the undershoot voltage is only 63.7 mV when the load current jumps from 0 to 100 mA with edge of 100 ns, while employing a 100 pF capacitance load. The recovery time to return to equilibrium post this abrupt change is approximately 0.15 μs. The proposed OCL-LDO regulator exhibits a substantial enhancement in transient response compared to its predecessors, alongside a harmonized balance between line regulation and load regulation performance parameters.

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具有非反相推挽增益级的瞬态增强型输出无电容 LDO 稳压器
本文介绍了一种新型非反相推挽增益级输出无电容低压差稳压器(OCL-LDO),它是专为片上系统(SoC)的电源管理而设计的。创新的非反相增益级(NIGS)可将非主要寄生极点转移到更高频率,从而增强系统的整体稳定性。拟议的拉推配置明显改善了功率晶体管栅极的压摆率限制。通过 180 纳米 CMOS 制造工艺验证的布局后仿真结果表明,建议的 LDO 稳压器在 0 mA 至 100 mA 的宽负载电流范围内都能保持稳定,而米勒补偿电容仅为 3.5 pF。当采用 1.5 V 单电源供电时,电路的静态电流为 143 μA。LDO 稳压器的压降为 300 mV,可提供高达 100 mA 的负载电流。仿真结果表明,在采用 100 pF 电容负载的情况下,当负载电流从 0 mA 跳至 100 mA 时,下冲电压仅为 63.7 mV,边沿为 100 ns。这种突然变化后恢复平衡的时间约为 0.15 μs。与前代产品相比,拟议的 OCL-LDO 稳压器大大提高了瞬态响应能力,同时在线路调节和负载调节性能参数之间实现了协调平衡。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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