{"title":"A Comprehensive Study on the Thermal Behavior of Perovskite Solar Cell","authors":"Ahmad Halal;Balázs Plesz","doi":"10.1109/TCPMT.2024.3430220","DOIUrl":null,"url":null,"abstract":"The precise understanding of perovskite solar cells (PSCs) under different temperature conditions is crucial for quality control and performance evaluation in real-life operational environments. Furthermore, it aids in evaluating how temperature variation affects the current mismatch in the perovskite/crystalline silicon (c-Si)-based tandem solar cells. This study scrutinizes the temperature-dependent performance of PSCs using numerical simulations in SCAPS software, based on the investigations that were performed to determine the effect of temperature on characteristic parameters like open-circuit voltage, short-circuit current, maximum power point voltage and current, efficiency, fill factor (FF) and the spectral response (SR). In addition, single-diode model (SDM) parameters (photocurrent, reverse saturation current, and ideality factor) were determined from the simulated curves of the PSCs. The findings demonstrate a commendable thermal stability for PSCs within the \n<inline-formula> <tex-math>$20~^{\\circ }$ </tex-math></inline-formula>\nC–\n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC temperature range, with a power temperature coefficient of -0.25% °C-1, a lower value than in average c-Si solar cells. However, at temperatures exceeding \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC, a significantly higher power temperature coefficient of up to -0.67% °C-1 was observed. The results highlighted a contrasting response to temperature changes between PSCs and c-Si solar cells: in PSCs, an increasing temperature leads to a slight drop in open-circuit voltage (\n<inline-formula> <tex-math>$V_{\\mathrm {OC}}$ </tex-math></inline-formula>\n) and short-circuit current (\n<inline-formula> <tex-math>$J_{\\mathrm {SC}}$ </tex-math></inline-formula>\n) values, whereas, in the case of c-Si, there is a drastic drop in \n<inline-formula> <tex-math>$V_{\\mathrm {OC}}$ </tex-math></inline-formula>\n while the \n<inline-formula> <tex-math>$J_{\\mathrm {SC}}$ </tex-math></inline-formula>\n increases. Moreover, the calculated SR of PSCs demonstrated the same slight difference of temperature behavior at temperatures up to \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC and under the whole spectrum wavelength range, whereas c-Si only remains stable in the ultraviolet and visible spectrum. Finally, evaluating the single-diode parameters also revealed contrasting thermal behavior between PSCs and c-Si solar cells, particularly in photocurrent density. PSCs also show a slight rise in ideality factor below \n<inline-formula> <tex-math>$55~^{\\circ }$ </tex-math></inline-formula>\nC, but this dependency intensifies at higher temperatures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 10","pages":"1753-1760"},"PeriodicalIF":2.3000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10601217/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The precise understanding of perovskite solar cells (PSCs) under different temperature conditions is crucial for quality control and performance evaluation in real-life operational environments. Furthermore, it aids in evaluating how temperature variation affects the current mismatch in the perovskite/crystalline silicon (c-Si)-based tandem solar cells. This study scrutinizes the temperature-dependent performance of PSCs using numerical simulations in SCAPS software, based on the investigations that were performed to determine the effect of temperature on characteristic parameters like open-circuit voltage, short-circuit current, maximum power point voltage and current, efficiency, fill factor (FF) and the spectral response (SR). In addition, single-diode model (SDM) parameters (photocurrent, reverse saturation current, and ideality factor) were determined from the simulated curves of the PSCs. The findings demonstrate a commendable thermal stability for PSCs within the
$20~^{\circ }$
C–
$55~^{\circ }$
C temperature range, with a power temperature coefficient of -0.25% °C-1, a lower value than in average c-Si solar cells. However, at temperatures exceeding
$55~^{\circ }$
C, a significantly higher power temperature coefficient of up to -0.67% °C-1 was observed. The results highlighted a contrasting response to temperature changes between PSCs and c-Si solar cells: in PSCs, an increasing temperature leads to a slight drop in open-circuit voltage (
$V_{\mathrm {OC}}$
) and short-circuit current (
$J_{\mathrm {SC}}$
) values, whereas, in the case of c-Si, there is a drastic drop in
$V_{\mathrm {OC}}$
while the
$J_{\mathrm {SC}}$
increases. Moreover, the calculated SR of PSCs demonstrated the same slight difference of temperature behavior at temperatures up to
$55~^{\circ }$
C and under the whole spectrum wavelength range, whereas c-Si only remains stable in the ultraviolet and visible spectrum. Finally, evaluating the single-diode parameters also revealed contrasting thermal behavior between PSCs and c-Si solar cells, particularly in photocurrent density. PSCs also show a slight rise in ideality factor below
$55~^{\circ }$
C, but this dependency intensifies at higher temperatures.
期刊介绍:
IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.