Pub Date : 2026-01-12DOI: 10.1109/TCPMT.2025.3640548
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3640548","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3640548","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 12","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11345818","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1109/TCPMT.2025.3640546
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3640546","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3640546","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 12","pages":"2801-2801"},"PeriodicalIF":3.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11345816","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1109/TCPMT.2025.3626875
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3626875","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3626875","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11264860","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1109/TCPMT.2025.3626873
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3626873","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3626873","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2547-2547"},"PeriodicalIF":3.0,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11264838","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-28DOI: 10.1109/TCPMT.2025.3620696
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3620696","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3620696","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 10","pages":"2279-2279"},"PeriodicalIF":3.0,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11220147","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145374745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-28DOI: 10.1109/TCPMT.2025.3620698
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3620698","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3620698","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 10","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2025-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11220138","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145374730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-23DOI: 10.1109/TCPMT.2025.3624273
Po-Yu Chen;Chieh-Pu Tsai;Liu-Hsin-Chen Yang;Kai-Chi Lin;Chih-Wen Chiu;Chih-En Hsu;Chung-Yu Chiu;Jui-Shen Chang;Chen-Nan Chiu;David T. Chu;Yao-Chun Chuang;Cheng-Yi Liu
This letter proposes a detailed analysis of the electromigration (EM)-induced voiding process in current-stressed Cu pillar/solder/Cu pad bumps, focusing on the amount and locations of void formation. Severe voiding primarily occurs within the Sn phase, which becomes trapped due to the uneven growth of a massive Cu${}_{mathbf {6}}$ Sn${}_{mathbf {5}}$ intermetallic compound. This phenomenon is identified as a crucial factor leading to EM failure and a reduced bump lifetime. The voiding in the trapped Sn phase is attributed to two main mechanisms: 1) the formation of Sn vacancies due to backfilling Sn flux as Cu pads are consumed and 2) the nonconservative volume change associated with the transformation of Sn phase into Cu${}_{mathbf {6}}$ Sn${}_{mathbf {5}}$ phase. The uneven growth of the massive Cu${}_{mathbf {6}}$ Sn${}_{mathbf {5}}$ compound is linked to the preferential dissolution of Cu fluxes, which are driven by the anisotropic diffusivity of Sn within its lattice and the divergence of atomic fluxes at Sn grain boundaries.
本文提出了对电流应力下铜柱/焊料/铜垫凸起中电迁移（EM）诱导的空穴过程的详细分析，重点是空穴形成的数量和位置。由于大量Cu ${}_{mathbf {6}}$ Sn ${}_{mathbf{5}}$金属间化合物的不均匀生长，Sn ${}_{mathbf{5}}$发生了严重的空化。这种现象被认为是导致EM失效和碰撞寿命缩短的关键因素。捕获Sn相的空化主要有两种机制：1)Cu衬垫被消耗时，由于Sn通量的充填而形成Sn空位；2)Sn相转变为Cu ${}_{mathbf {6}}$ Sn ${}_{mathbf{5}}$相引起的非保守体积变化。Cu ${}_{mathbf {6}}$ Sn ${}_{mathbf{5}}$化合物的不均匀生长与Cu通量的优先溶解有关，这是由Sn在其晶格内的各向异性扩散率和Sn晶界原子通量的发散驱动的。
{"title":"EM-Induced Voiding Mechanism in Trapped Sn Phase Inside Massive Cu–Sn Compound","authors":"Po-Yu Chen;Chieh-Pu Tsai;Liu-Hsin-Chen Yang;Kai-Chi Lin;Chih-Wen Chiu;Chih-En Hsu;Chung-Yu Chiu;Jui-Shen Chang;Chen-Nan Chiu;David T. Chu;Yao-Chun Chuang;Cheng-Yi Liu","doi":"10.1109/TCPMT.2025.3624273","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3624273","url":null,"abstract":"This letter proposes a detailed analysis of the electromigration (EM)-induced voiding process in current-stressed Cu pillar/solder/Cu pad bumps, focusing on the amount and locations of void formation. Severe voiding primarily occurs within the Sn phase, which becomes trapped due to the uneven growth of a massive Cu<inline-formula> <tex-math>${}_{mathbf {6}}$ </tex-math></inline-formula> Sn<inline-formula> <tex-math>${}_{mathbf {5}}$ </tex-math></inline-formula> intermetallic compound. This phenomenon is identified as a crucial factor leading to EM failure and a reduced bump lifetime. The voiding in the trapped Sn phase is attributed to two main mechanisms: 1) the formation of Sn vacancies due to backfilling Sn flux as Cu pads are consumed and 2) the nonconservative volume change associated with the transformation of Sn phase into Cu<inline-formula> <tex-math>${}_{mathbf {6}}$ </tex-math></inline-formula>Sn<inline-formula> <tex-math>${}_{mathbf {5}}$ </tex-math></inline-formula> phase. The uneven growth of the massive Cu<inline-formula> <tex-math>${}_{mathbf {6}}$ </tex-math></inline-formula>Sn<inline-formula> <tex-math>${}_{mathbf {5}}$ </tex-math></inline-formula> compound is linked to the preferential dissolution of Cu fluxes, which are driven by the anisotropic diffusivity of Sn within its lattice and the divergence of atomic fluxes at Sn grain boundaries.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 12","pages":"2797-2800"},"PeriodicalIF":3.0,"publicationDate":"2025-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Innovative thermal management solutions are required to maintain a lower operating temperature of current lidless packages of AI chips. This study systematically investigates direct-on-chip multiliquid jets cooling over a 2.5-D interposer package using dielectric fluid. A compact metallic and lid-compatible manifold is proposed using 3-D printing technology with alternating impinging and draining nozzles, matching the dimensions of NVIDIA V100 chip. The fabricated manifold is mounted over the stiffener and mechanically pressurized with top cover plate and screw arrangement to ensure mechanical robustness and leak proof operation. A dielectric fluid R1233zd(E) is used as a working fluid at a saturation temperature of $37.5~^{circ }$ C. Operating GPU temperature is experimentally measured for various flow rates, and power load up to thermal design power of 300 W using embedded sensor within the device. The finding under two-phase operation reveals a significantly lower temperature, measuring lowest thermal resistance of ~0.05 K/W with excellent response for step variation in power maps. This enhanced thermal dissipation at the chip level facilitates the compact lidded manifold package and next-generation AI chip.
{"title":"Integrated Metal-Lidded Microfluidic Cooling on a High-Power AI Chip Using Confined Two-Phase Liquid Jet With Dielectric Fluid R1233zd(E)","authors":"Gopinath Sahu;Sidharth Rajeev;Duc Hoang;Harish Kumar Lattupalli;Srikanth Rangarajan;Bahgat G. Sammakia;Scott Schiffres;Tiwei Wei","doi":"10.1109/TCPMT.2025.3623470","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3623470","url":null,"abstract":"Innovative thermal management solutions are required to maintain a lower operating temperature of current lidless packages of AI chips. This study systematically investigates direct-on-chip multiliquid jets cooling over a 2.5-D interposer package using dielectric fluid. A compact metallic and lid-compatible manifold is proposed using 3-D printing technology with alternating impinging and draining nozzles, matching the dimensions of NVIDIA V100 chip. The fabricated manifold is mounted over the stiffener and mechanically pressurized with top cover plate and screw arrangement to ensure mechanical robustness and leak proof operation. A dielectric fluid R1233zd(E) is used as a working fluid at a saturation temperature of <inline-formula> <tex-math>$37.5~^{circ }$ </tex-math></inline-formula>C. Operating GPU temperature is experimentally measured for various flow rates, and power load up to thermal design power of 300 W using embedded sensor within the device. The finding under two-phase operation reveals a significantly lower temperature, measuring lowest thermal resistance of ~0.05 K/W with excellent response for step variation in power maps. This enhanced thermal dissipation at the chip level facilitates the compact lidded manifold package and next-generation AI chip.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 12","pages":"2789-2792"},"PeriodicalIF":3.0,"publicationDate":"2025-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-17DOI: 10.1109/TCPMT.2025.3622728
Guangwei Fan;Xiaohuai He;Dawei Ding
In this letter, a dual-wideband bandpass filter (BPF) covering 22.4–29 GHz (25.7%) and 36.85–45.2 GHz (20.4%) is designed in one substrate-integrated waveguide (SIW) cavity. It has one SIW cavity and two multimode resonant structures (MMRSs) consisting of one nonuniform H-shaped structure (NHS) and two L-shaped structures (LSs). There are six resonant modes, including the TE110 and TE120 modes of SIW cavity, two self-resonant modes from NHS, and a pair of odd and even modes from LSs. Four transmission zeros (TZs) are generated through their cross-coupling without any filtering circuit. As seen from design results, it provides a great candidate for 5G mmWave applications owing to its wide bandwidth, self-packaging, and easy integration.
{"title":"Dual-Wideband Bandpass Filter in Single SIW Cavity for 5G mmWave Systems","authors":"Guangwei Fan;Xiaohuai He;Dawei Ding","doi":"10.1109/TCPMT.2025.3622728","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3622728","url":null,"abstract":"In this letter, a dual-wideband bandpass filter (BPF) covering 22.4–29 GHz (25.7%) and 36.85–45.2 GHz (20.4%) is designed in one substrate-integrated waveguide (SIW) cavity. It has one SIW cavity and two multimode resonant structures (MMRSs) consisting of one nonuniform H-shaped structure (NHS) and two L-shaped structures (LSs). There are six resonant modes, including the TE<sub>110</sub> and TE<sub>120</sub> modes of SIW cavity, two self-resonant modes from NHS, and a pair of odd and even modes from LSs. Four transmission zeros (TZs) are generated through their cross-coupling without any filtering circuit. As seen from design results, it provides a great candidate for 5G mmWave applications owing to its wide bandwidth, self-packaging, and easy integration.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 12","pages":"2793-2796"},"PeriodicalIF":3.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145982140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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