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IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information IEEE元件、封装与制造技术学会汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-03 DOI: 10.1109/TCPMT.2026.3657089
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE元件、封装与制造技术资讯汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-02-03 DOI: 10.1109/TCPMT.2026.3657087
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE元件、封装与制造技术资讯汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-20 DOI: 10.1109/TCPMT.2026.3652066
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information IEEE元件、封装与制造技术学会汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-20 DOI: 10.1109/TCPMT.2026.3652068
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information IEEE元件、封装与制造技术学会汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1109/TCPMT.2025.3640548
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE元件、封装与制造技术资讯汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-12 DOI: 10.1109/TCPMT.2025.3640546
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引用次数: 0
Corrections to “Stable HIPPO-Based Circuit Macro-Modeling” 对“基于稳定hippo的电路宏观建模”的修正
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-24 DOI: 10.1109/TCPMT.2025.3614737
Bijan Shahriari;Roni Khazaka
In [1], typos are present in (6), (26), and (28). The correct equations are, respectively, presented as follows: begin{align*} g(r) approx k_0(t)p_0(r) + {dots }+ k_{mathcal N-1}(t)p_{mathcal N-1}(r). tag {6}end{align*} begin{align*} & dot V(mathbb Z) = left ({{ 2mathbb Z^{top } mathbf P + 2cmathbb {F}(mathbb Z)^{top }mathbf {Omega }}}right) left ({{-mathbb {Z} + Gamma mathbb {WF}(mathbb Z) }}right) & = begin{bmatrix} mathbb Z mathbb {F} end{bmatrix}^{top } & begin{bmatrix} -2mathbf P {& } mathbf PGamma mathbb W - cmathbf {Omega } mathbb W^{top } Gamma ^ {top }mathbf P - cmathbf {Omega }{& } left ({{mathbf {Omega }Gamma mathbb W + mathbb W^{top }Gamma ^ {top }mathbf {Omega }}}right)c end{bmatrix} begin{bmatrix} mathbb Z mathbb {F} end{bmatrix}. tag {26}end{align*} begin{align*} & mathbb H & = begin{bmatrix} -2mathbf P {& } mathbf PGamma mathbb W mathbb W^{top } Gamma ^ {top }mathbf P {& } left [{{mathbf {Omega }left ({{Gamma mathbb W - mathbf I}}right) + left ({{mathbb W^{top } Gamma ^ {top } - mathbf I}}right)mathbf {Omega }}}right]c end{bmatrix}. tag {28}end{align*}
在[1]中,(6)、(26)和(28)中出现了错别字。正确的方程分别为: begin{align*} g(r) approx k_0(t)p_0(r) + {dots }+ k_{mathcal N-1}(t)p_{mathcal N-1}(r). tag {6}end{align*} begin{align*} & dot V(mathbb Z) = left ({{ 2mathbb Z^{top } mathbf P + 2cmathbb {F}(mathbb Z)^{top }mathbf {Omega }}}right) left ({{-mathbb {Z} + Gamma mathbb {WF}(mathbb Z) }}right) & = begin{bmatrix} mathbb Z mathbb {F} end{bmatrix}^{top } & begin{bmatrix} -2mathbf P {& } mathbf PGamma mathbb W - cmathbf {Omega } mathbb W^{top } Gamma ^ {top }mathbf P - cmathbf {Omega }{& } left ({{mathbf {Omega }Gamma mathbb W + mathbb W^{top }Gamma ^ {top }mathbf {Omega }}}right)c end{bmatrix} begin{bmatrix} mathbb Z mathbb {F} end{bmatrix}. tag {26}end{align*} begin{align*} & mathbb H & = begin{bmatrix} -2mathbf P {& } mathbf PGamma mathbb W mathbb W^{top } Gamma ^ {top }mathbf P {& } left [{{mathbf {Omega }left ({{Gamma mathbb W - mathbf I}}right) + left ({{mathbb W^{top } Gamma ^ {top } - mathbf I}}right)mathbf {Omega }}}right]c end{bmatrix}. tag {28}end{align*}
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information IEEE元件、封装与制造技术学会汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-24 DOI: 10.1109/TCPMT.2025.3626875
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE元件、封装与制造技术资讯汇刊
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-24 DOI: 10.1109/TCPMT.2025.3626873
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引用次数: 0
Two-Phase Liquid Cooling of Vertically Stacked High-Power Chips With Backside-Embedded Micro-Pin Fins 后置微针鳍垂直堆叠高功率芯片的两相液冷
IF 3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-12 DOI: 10.1109/TCPMT.2025.3631836
Huicheng Feng;Gongyue Tang;Xiaowu Zhang;Boon Long Lau;Ming Chinq Jong
Three-dimensional integrated circuits (3-D ICs) enable a higher level of device integration for high-performance computing but also introduce significant thermal challenges due to increased power density. This letter demonstrates a two-phase liquid cooling approach for stacked high-power chips featuring backside-embedded micro-pin fins. Deionized water is circulated directly through the chips, providing internal cooling. The results show effective thermal management, with maximum power levels of 126–140 W achieved for Chips 1 and 2. Temperature fluctuations in the two-phase regime remain minimal, confirming the approach’s practicality. Chip 2 benefits from lower temperatures and higher heat transfer coefficients due to double-side cooling by water flowing through both itself and Chip 1. Increasing the flowrate reduces the chip temperatures and improves heat transfer coefficients but incurs higher pressure drops. The coefficient of performance (COP) decreases with flowrate but improves with heat power. These findings validate the feasibility of the proposed cooling method and establish a proof of concept for further integration in 3-D IC designs.
三维集成电路(3-D ic)为高性能计算提供了更高水平的器件集成,但由于功率密度的增加,也带来了重大的热挑战。这封信展示了一种两相液体冷却方法,用于具有背面嵌入式微针鳍的堆叠高功率芯片。去离子水直接通过芯片循环,提供内部冷却。结果显示了有效的热管理,芯片1和2的最大功率达到126-140 W。两相状态下的温度波动仍然很小,证实了该方法的实用性。芯片2受益于较低的温度和较高的传热系数,由于水流经自身和芯片1的双面冷却。增加流量可以降低芯片温度,提高传热系数,但会导致更高的压降。性能系数(COP)随流量的增大而减小,随热功率的增大而增大。这些发现验证了所提出的冷却方法的可行性,并为进一步集成到3-D集成电路设计中建立了概念验证。
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引用次数: 0
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IEEE Transactions on Components, Packaging and Manufacturing Technology
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