Origin of the Surface Magnetic Dead Layer in Rare‐Earth Titanates

IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY Advanced Materials Interfaces Pub Date : 2024-07-26 DOI:10.1002/admi.202400489
Raphaël Aeschlimann, Manuel Bibes, Alexandre Gloter
{"title":"Origin of the Surface Magnetic Dead Layer in Rare‐Earth Titanates","authors":"Raphaël Aeschlimann, Manuel Bibes, Alexandre Gloter","doi":"10.1002/admi.202400489","DOIUrl":null,"url":null,"abstract":"Perovskite rare‐earth titanates RTiO<jats:sub>3</jats:sub> display a rich array of magnetic and electronic properties, with a Mott‐insulating ground state and ferro‐ or antiferromagnetic spin orders depending on the rare‐earth R. The nominal Ti valence is 3+ with a corresponding 3<jats:italic>d</jats:italic><jats:sup>1</jats:sup> configuration. Yet, at the surface of both bulk and thin films of RTiO<jats:sub>3</jats:sub>, the Ti valence has been found to strongly deviate towards the more stable 4+ state, adversely affecting magnetic properties. While this finding is rather ubiquitous, its exact origin is still poorly understood, which hampers the integration of RTiO<jats:sub>3</jats:sub> into complex heterostructures harnessing their rich physics. Here, scanning transmission electron microscope and electron energy loss spectroscopy experiments are used to analyze the top part of an epitaxial DyTiO<jats:sub>3</jats:sub> thin film displaying a well‐developed Ti<jats:sup>4+</jats:sup>‐rich layer over several nanometres. It shows that this valence evolution is related to a combination of short‐range ordered interstitial oxygen planes and Ti‐Dy cationic imbalance. Both defects synergistically contribute to enough hole doping for a complete transition toward Ti<jats:sup>4+</jats:sup> over a few unit‐cells from the surface while a structure primarily of the perovskite‐type is maintained.","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/admi.202400489","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

Perovskite rare‐earth titanates RTiO3 display a rich array of magnetic and electronic properties, with a Mott‐insulating ground state and ferro‐ or antiferromagnetic spin orders depending on the rare‐earth R. The nominal Ti valence is 3+ with a corresponding 3d1 configuration. Yet, at the surface of both bulk and thin films of RTiO3, the Ti valence has been found to strongly deviate towards the more stable 4+ state, adversely affecting magnetic properties. While this finding is rather ubiquitous, its exact origin is still poorly understood, which hampers the integration of RTiO3 into complex heterostructures harnessing their rich physics. Here, scanning transmission electron microscope and electron energy loss spectroscopy experiments are used to analyze the top part of an epitaxial DyTiO3 thin film displaying a well‐developed Ti4+‐rich layer over several nanometres. It shows that this valence evolution is related to a combination of short‐range ordered interstitial oxygen planes and Ti‐Dy cationic imbalance. Both defects synergistically contribute to enough hole doping for a complete transition toward Ti4+ over a few unit‐cells from the surface while a structure primarily of the perovskite‐type is maintained.

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稀土钛酸盐表面磁死层的起源
透镜稀土钛酸盐 RTiO3 具有丰富的磁性和电子特性,其基态为莫特绝缘态,铁磁或反铁磁自旋阶数取决于稀土 R。然而,在 RTiO3 块体和薄膜的表面,人们发现钛价会强烈偏离更稳定的 4+ 态,从而对磁性能产生不利影响。虽然这一发现相当普遍,但其确切的起源仍鲜为人知,这阻碍了将 RTiO3 集成到复杂的异质结构中,以利用其丰富的物理特性。在此,我们利用扫描透射电子显微镜和电子能量损失光谱实验分析了外延 DyTiO3 薄膜的顶部,该薄膜在数纳米的范围内显示出一个发达的富含 Ti4+ 的层。研究表明,这种价态演化与短程有序间隙氧平面和 Ti-Dy 阳离子不平衡相结合有关。这两种缺陷协同作用,产生了足够的空穴掺杂,从而在保持主要为透辉石型结构的同时,从表面开始的几个单元单元上完全向 Ti4+ 过渡。
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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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