{"title":"Analytical modeling of threshold voltage and on-resistance in multi-barrier E-mode MISHEMT with gate-recess and field-plates","authors":"","doi":"10.1016/j.mejo.2024.106318","DOIUrl":null,"url":null,"abstract":"<div><p>This work presents an analytical model for threshold voltage and On-resistance of multi barrier Metal–Insulator–Semiconductor High-Electron-Mobility-Transistor (MISHEMT) with gate-recess and field-plates. The device featuring a high two-dimensional electron-gas (2DEG) density in the channel region. The primary objectives of this device are to achieve a high threshold voltage (<span><math><mrow><msub><mi>V</mi><mrow><mi>t</mi><mi>h</mi></mrow></msub></mrow></math></span>) and enhance electron mobility with specific low ON-resistance (<span><math><mrow><msub><mi>R</mi><mrow><mi>o</mi><mi>n</mi><mo>_</mo><mi>s</mi><mi>p</mi></mrow></msub></mrow></math></span>) by mitigating the degradation effects arising from scattering and interface-charges. Also, a physics based analytical model for <span><math><mrow><msub><mi>V</mi><mrow><mi>t</mi><mi>h</mi></mrow></msub></mrow></math></span> and 2DEG charge density at upper and lower channels is presented. This model is validated by comparing with TCAD numerical simulations and are well matched. The proposed MISHEMT demonstrates improved electron mobility in the lower channel of 1260 <span><math><mrow><msup><mrow><mi>c</mi><mi>m</mi></mrow><mn>2</mn></msup><mo>/</mo><mi>V</mi><mo>.</mo><mi>s</mi></mrow></math></span>, <span><math><mrow><msub><mi>V</mi><mrow><mi>t</mi><mi>h</mi></mrow></msub></mrow></math></span> of ∼2.6 V and <span><math><mrow><msub><mi>R</mi><mrow><mi>o</mi><mi>n</mi><mo>_</mo><mi>s</mi><mi>p</mi></mrow></msub></mrow></math></span> is minimized by 33 % in contrast with a conventional MISHEMT. Additionally, the proposed MISHEMT becomes a promising device for achieving both high threshold voltage and mobility which are required for power semiconductor devices.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000225","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This work presents an analytical model for threshold voltage and On-resistance of multi barrier Metal–Insulator–Semiconductor High-Electron-Mobility-Transistor (MISHEMT) with gate-recess and field-plates. The device featuring a high two-dimensional electron-gas (2DEG) density in the channel region. The primary objectives of this device are to achieve a high threshold voltage () and enhance electron mobility with specific low ON-resistance () by mitigating the degradation effects arising from scattering and interface-charges. Also, a physics based analytical model for and 2DEG charge density at upper and lower channels is presented. This model is validated by comparing with TCAD numerical simulations and are well matched. The proposed MISHEMT demonstrates improved electron mobility in the lower channel of 1260 , of ∼2.6 V and is minimized by 33 % in contrast with a conventional MISHEMT. Additionally, the proposed MISHEMT becomes a promising device for achieving both high threshold voltage and mobility which are required for power semiconductor devices.
期刊介绍:
Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems.
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