A 18-bit 1-MS/s fully-differential SAR ADC with digital calibration achieving 96.1 dB SNDR

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-07-18 DOI:10.1016/j.mejo.2024.106297
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Abstract

This paper presents a 18-bit 1 MS/s fully-differential Successive-Approximation-Register Analog-to-Digital Converter (SAR ADC) achieving an ENOB of 15.7-bit. To achieve higher performance, a differential DAC utilizing both split and monotonic switching timing is designed. For both dynamic and static performance improvement, five techniques are proposed. First, a foreground digital self-calibration method based on normalized-full-scale-referencing is described to eliminate the capacitor mismatch errors. L-segment capacitors are utilized to measure and calculate the bit weights of other capacitors. Second, a DNL enhancement technique is presented. The fractional capacitors are used to subtract an analog voltage from the DAC before the conversion is finished, which further improve the ADC performance. Third, an adaptive-tracking-extra-bit-trail together with comparator noise extraction and correction for further accuracy enhancement is proposed. Forth, a harmonic calibration technique, which can efficiently attenuate 2-order and 3-order harmonic is introduced. Fifth, a comparator with ultra-low noise and offset is designed to meet the 18-bit 1-MS/s ADC. The ADC is fabricated in a 0.18-μm 5-V CMOS process. It measures a 96.1 dB SNDR and a 110.7 dB SFDR. The DNL and INL are within ±0.32 LSB and ±0.5 LSB, respectively. The overall power consumption of ADC core, drawn from the 5 V power supply, is 45 mW.

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具有数字校准功能的 18 位 1-MS/s 全差分 SAR ADC,实现 96.1 dB SNDR
本文介绍了一种 18 位 1 MS/s 全差分逐次逼近寄存器模数转换器(SAR ADC),其 ENOB 达到 15.7 位。为了实现更高的性能,设计了一种利用分路和单调开关定时的差分 DAC。为了提高动态和静态性能,提出了五种技术。首先,描述了一种基于归一化全尺度参照的前景数字自校准方法,以消除电容器失配误差。利用 L 段电容来测量和计算其他电容的位权。其次,介绍了 DNL 增强技术。小数电容用于在转换完成前从 DAC 中减去模拟电压,从而进一步提高 ADC 性能。第三,为进一步提高精度,提出了自适应跟踪额外位轨迹以及比较器噪声提取和校正技术。第四,引入了一种谐波校准技术,可有效衰减 2 阶和 3 阶谐波。第五,设计了一个具有超低噪声和偏移的比较器,以满足 18 位 1-MS/s ADC 的要求。ADC 采用 0.18μm 5-V CMOS 工艺制造。它的 SNDR 为 96.1 dB,SFDR 为 110.7 dB。DNL 和 INL 分别在 ±0.32 LSB 和 ±0.5 LSB 范围内。ADC 内核的总功耗为 45 mW,由 5 V 电源供电。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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