Parametric Modeling of Coupled Stripline Coupler With Arbitrary Operating Frequency and Coupling Coefficient in Silicon-Based 3-D RF Integration

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2024-07-30 DOI:10.1109/TCPMT.2024.3435863
Chen-Chen Li;Liang-Feng Qiu;Lin-Sheng Wu;Jun-Fa Mao
{"title":"Parametric Modeling of Coupled Stripline Coupler With Arbitrary Operating Frequency and Coupling Coefficient in Silicon-Based 3-D RF Integration","authors":"Chen-Chen Li;Liang-Feng Qiu;Lin-Sheng Wu;Jun-Fa Mao","doi":"10.1109/TCPMT.2024.3435863","DOIUrl":null,"url":null,"abstract":"A parametric model is proposed for the coupled stripline coupler with arbitrary operating frequency and coupling coefficient in silicon-based 3-D RF integration. All the three parts of the coupler configuration, including the coupled stripline section, the coupled bends, and the stripline to grounded coplanar waveguide (GCPW) transitions, are modeled and then constructed. The conformal mapping (CM) method is employed to establish the relationship between the key geometrical parameters and the eigenmode characteristic impedances of coupled striplines. The analytical model is validated with high accuracy and the error is less than 4% when compared with the full-wave simulations. A scalable equivalent circuit model is established for the coupled bends with the arbitrary bend angle between 0° and 90°, which is formed by the integration of subregions. An equivalent circuit model is proposed for the stripline-to-GCPW transition and validated by full-wave simulation. Nine coupler prototypes are synthesized and fabricated with three typical coupling coefficients (7, 8, and 11 dB) and three central frequencies (10, 20, and 26.5 GHz). Good agreement is achieved among the S-parameters obtained by the proposed circuit model, full-wave simulations, and on-wafer measurements. The return loss and isolation of the couplers are better than 15 and 20 dB, respectively.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1441-1453"},"PeriodicalIF":2.3000,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Components, Packaging and Manufacturing Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10614625/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

A parametric model is proposed for the coupled stripline coupler with arbitrary operating frequency and coupling coefficient in silicon-based 3-D RF integration. All the three parts of the coupler configuration, including the coupled stripline section, the coupled bends, and the stripline to grounded coplanar waveguide (GCPW) transitions, are modeled and then constructed. The conformal mapping (CM) method is employed to establish the relationship between the key geometrical parameters and the eigenmode characteristic impedances of coupled striplines. The analytical model is validated with high accuracy and the error is less than 4% when compared with the full-wave simulations. A scalable equivalent circuit model is established for the coupled bends with the arbitrary bend angle between 0° and 90°, which is formed by the integration of subregions. An equivalent circuit model is proposed for the stripline-to-GCPW transition and validated by full-wave simulation. Nine coupler prototypes are synthesized and fabricated with three typical coupling coefficients (7, 8, and 11 dB) and three central frequencies (10, 20, and 26.5 GHz). Good agreement is achieved among the S-parameters obtained by the proposed circuit model, full-wave simulations, and on-wafer measurements. The return loss and isolation of the couplers are better than 15 and 20 dB, respectively.
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硅基 3D 射频集成中具有任意工作频率和耦合系数的耦合带状线耦合器的参数建模
针对硅基三维射频集成中具有任意工作频率和耦合系数的耦合带状线耦合器,提出了一个参数模型。耦合器配置的所有三个部分,包括耦合带状线部分、耦合弯曲部分以及带状线到接地共面波导(GCPW)的过渡部分,均被建模并构建。利用共形映射 (CM) 方法建立了关键几何参数与耦合带状线特征阻抗之间的关系。分析模型得到了高精度验证,与全波模拟相比,误差小于 4%。针对任意弯曲角度在 0° 至 90° 之间的耦合弯曲,建立了一个可扩展的等效电路模型,该模型由子区域集成形成。针对条纹到 GCPW 过渡提出了等效电路模型,并通过全波仿真进行了验证。合成并制造了九个耦合器原型,具有三个典型耦合系数(7、8 和 11 dB)和三个中心频率(10、20 和 26.5 GHz)。通过所提出的电路模型、全波仿真和晶圆测量获得的 S 参数之间实现了良好的一致性。耦合器的回波损耗和隔离度分别优于 15 和 20 dB。
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来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
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