Modeling and Numerical Insights of TiSe2 Compound-Based Photodetector

Abstract

This study presents a comprehensive simulation of a TiSe₂-based photodetector, an optoelectronic device adept at converting a spectrum of electromagnetic radiation spanning ultraviolet (UV), visible, and infrared wavelengths into electrical signals. The TiSe₂ absorber material is characterized by a narrow direct bandgap of 1.2 eV, endowing the photodetector with superior optical and electronic attributes that enhance its photodetection capabilities. In-depth analysis of the energy band diagram, the current-voltage (J-V) characteristics, and spectral responses is conducted. This article involves in methodical variations in the thickness, doping levels, and defect density across different layers to achieve optimal performance. The photodetector's current, J_SC, and voltage, V_OC are recorded at 37.30 mA cm⁻² and 0.795 V, in turn. Additionally, the device achieves a peak responsivity, R of 0.67 A W⁻¹ and a detectivity, D^* of 12.9 × 10¹⁴ Jones at a wavelength of 920 nm. Notably, the spectral response is significantly enhanced between 760 and 1010 nm, indicating the photodetector's proficient detection of near-infrared (NIR) light. The findings underscore the potential of TiSe₂ as an effective material for photodetector applications, marking a significant advancement in the field and paving the way for future research endeavors in photodetector technology.