Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu
{"title":"Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing","authors":"Siyi Huang, Masao Ikeda, Feng Zhang, Minglong Zhang, Jianjun Zhu, Shuming Zhang and Jianping Liu","doi":"10.1088/1674-4926/24010017","DOIUrl":null,"url":null,"abstract":"Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper. Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges. Hole concentration, resistivity and mobility were characterized by room-temperature Hall measurements. The Mg doping concentration and the residual impurities such as H, C, O and Si were measured by secondary ion mass spectroscopy, confirming negligible compensations by the impurities. The hole concentration, resistivity and mobility data are presented as a function of Mg concentration, and are compared with literature data. The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density [ ] (cm−3) dependent ionization energy of Mg acceptor was determined as = 184 − 2.66 × 10−5 × [ ]1/3 meV.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"27 Pt 4 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/24010017","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper. Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges. Hole concentration, resistivity and mobility were characterized by room-temperature Hall measurements. The Mg doping concentration and the residual impurities such as H, C, O and Si were measured by secondary ion mass spectroscopy, confirming negligible compensations by the impurities. The hole concentration, resistivity and mobility data are presented as a function of Mg concentration, and are compared with literature data. The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density [ ] (cm−3) dependent ionization energy of Mg acceptor was determined as = 184 − 2.66 × 10−5 × [ ]1/3 meV.