Ziwei Hu, Jiafei Yao, Ang Li, Qi Sun, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang and Yufeng Guo
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引用次数: 0
Abstract
Silicon carbide (SiC), as a third-generation semiconductor material, possesses exceptional material properties that significantly enhance the performance of power devices. The SiC lateral double-diffused metal–oxide–semiconductor (LDMOS) power devices have undergone continuous optimization, resulting in an increase in breakdown voltage (BV) and ultra-low specific on-resistance (Ron,sp). This paper has summarized the structural optimizations and experimental progress of SiC LDMOS power devices, including the trench-gate technology, reduced surface field (RESURF) technology, doping technology, junction termination techniques and so on. The paper is aimed at enhancing the understanding of the operational mechanisms and providing guidelines for the further development of SiC LDMOS power devices.
碳化硅(SiC)作为第三代半导体材料,具有优异的材料特性,可显著提高功率器件的性能。碳化硅侧向双扩散金属氧化物半导体(LDMOS)功率器件经过不断优化,实现了击穿电压(BV)的提高和超低比导通电阻(Ron,sp)。本文总结了 SiC LDMOS 功率器件的结构优化和实验进展,包括沟槽栅极技术、减小表面场(RESURF)技术、掺杂技术、结端技术等。本文旨在加深对工作机制的理解,并为进一步开发 SiC LDMOS 功率器件提供指导。