Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Nanotechnology Pub Date : 2024-08-05 DOI:10.1109/TNANO.2024.3438542
Md Mazharul Islam;Shamiul Alam;Mohammad Adnan Jahangir;Garrett S. Rose;Suman Datta;Vijaykrishnan Narayanan;Sumeet Kumar Gupta;Ahmedullah Aziz
{"title":"Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing","authors":"Md Mazharul Islam;Shamiul Alam;Mohammad Adnan Jahangir;Garrett S. Rose;Suman Datta;Vijaykrishnan Narayanan;Sumeet Kumar Gupta;Ahmedullah Aziz","doi":"10.1109/TNANO.2024.3438542","DOIUrl":null,"url":null,"abstract":"Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we introduce three novel sense amplifier topologies based on phase transition materials (PTM) in addition to the previously proposed one, collectively analyzing all four designs tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and fast sensing operation in our proposed SA topologies. We provide comprehensive details of their functionality and assess how process variations impact their performance metrics. Our proposed sense amplifier topologies manifest notable performance enhancement. We achieve a ∼67% reduction in sensing delay and a ∼80% decrease in sensing power for current sensing. For voltage sensing, we achieve a ∼75% reduction in sensing delay and a ∼33% decrease in sensing power. Moreover, the proposed SA topologies exhibit improved variation robustness compared to conventional SAs. We also scrutinize the dependence of transistor mirroring window and PTM transition voltages on several device parameters to determine the optimum operating conditions and stance of tunability for each of the proposed SA topologies.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10623299/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we introduce three novel sense amplifier topologies based on phase transition materials (PTM) in addition to the previously proposed one, collectively analyzing all four designs tailored for non-volatile memory applications. We utilize the abrupt switching and volatile hysteretic characteristics of PTMs which enables efficient and fast sensing operation in our proposed SA topologies. We provide comprehensive details of their functionality and assess how process variations impact their performance metrics. Our proposed sense amplifier topologies manifest notable performance enhancement. We achieve a ∼67% reduction in sensing delay and a ∼80% decrease in sensing power for current sensing. For voltage sensing, we achieve a ∼75% reduction in sensing delay and a ∼33% decrease in sensing power. Moreover, the proposed SA topologies exhibit improved variation robustness compared to conventional SAs. We also scrutinize the dependence of transistor mirroring window and PTM transition voltages on several device parameters to determine the optimum operating conditions and stance of tunability for each of the proposed SA topologies.
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重塑感应放大器:利用相变材料进行电流和电压传感
在新兴存储器系统中,高能效感应放大器(SA)电路对于存储存储器状态的可靠检测至关重要。在这项工作中,除了之前提出的基于相变材料(PTM)的新型感应放大器拓扑结构外,我们还介绍了三种新型感应放大器拓扑结构,并针对非易失性存储器应用对所有四种设计进行了综合分析。我们利用 PTM 的突然开关和易挥发滞后特性,在我们提出的 SA 拓扑中实现了高效、快速的感应操作。我们提供了有关其功能的全面细节,并评估了工艺变化对其性能指标的影响。我们提出的感应放大器拓扑结构具有显著的性能提升。在电流感应方面,我们将感应延迟降低了 ∼ 67%,感应功率降低了 ∼ 80%。在电压传感方面,我们实现了传感延迟降低 75% 和传感功率降低 33% 的目标。此外,与传统的传感器相比,所提出的传感器拓扑结构具有更好的变化鲁棒性。我们还仔细研究了晶体管镜像窗口和 PTM 转换电压对多个器件参数的依赖性,以确定每种拟议 SA 拓扑的最佳工作条件和可调性。
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来源期刊
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology 工程技术-材料科学:综合
CiteScore
4.80
自引率
8.30%
发文量
74
审稿时长
8.3 months
期刊介绍: The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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