Dislocation-induced flexoelectricity in SrTiO$_3$ nanostructure from first principles

Kunihiko Yamauchi, Thi Phuong Thao Nguyen, Tamio Oguchi
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Abstract

Flexoelectricity refers to a linear coupling between the electric polarization and the strain gradient, such as bending or asymmetric compression. This effect is enhanced in nano-scale structures, where grain boundaries or dislocation cores induce the strain gradient. In this study, we theoretically investigate the flexoelectric polarization induced by misfit dislocations in a thin film. A nano-scale dislocation structure is modeled in a periodic SrTiO$_3$ supercell, and then the structure is optimized by using neural-network-potential and first-principles approaches. We point out that a pyramidal TiO$_5$ coordination forms near the dislocation cores, which in turn dominantly causes the sizable flexoelectric polarization.
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从第一原理看 SrTiO$_3$ 纳米结构中的位错诱导柔电性
柔电是指电极化与弯曲或不对称压缩等应变梯度之间的线性耦合。在纳米级结构中,晶界或位错核心会诱发应变梯度,从而增强了这种效应。本研究从湿理论上研究了薄膜中错配位错诱导的挠电极化。在非周期性 SrTiO$_3$ 超晶胞中建立了纳米级位错结构模型,然后利用神经网络电位和第一原理方法对该结构进行了优化。我们指出,在位错核心附近形成了金字塔形的 TiO$_5$ 配位,这反过来又主要导致了可观的挠电极化。
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