Giant interfacial Dzyaloshinskii-Moriya Interaction in perovskite La_{0.7}Sr_{0.3}MnO_{3} films

L. Yang, X. Zhang, H. Wang, N. Lei, J. Wang, Y. Sun, L. Liu, Z. Zhao, Y. Yang, D. Wei, D. Pan, J. Zhao, J. Shen, W. g Zhao, H. Lu, W. Wang, H. Yu
{"title":"Giant interfacial Dzyaloshinskii-Moriya Interaction in perovskite La_{0.7}Sr_{0.3}MnO_{3} films","authors":"L. Yang, X. Zhang, H. Wang, N. Lei, J. Wang, Y. Sun, L. Liu, Z. Zhao, Y. Yang, D. Wei, D. Pan, J. Zhao, J. Shen, W. g Zhao, H. Lu, W. Wang, H. Yu","doi":"arxiv-2408.04959","DOIUrl":null,"url":null,"abstract":"The Dzyaloshinskii-Moriya interaction (DMI) plays a critical role in\nstabilizing topological spin textures, a key area of growing interest in\noxide-based spintronics. While most of reported topological phenomena found in\nmanganites are related to the bulk-like DMI, the understanding of interfacial\nDMI and its origin in oxide interfaces remain limited. Here we experimentally\ninvestigate the interfacial DMI of La_{0.7}Sr_{0.3}MnO_{3} (LSMO) films grown\non various substrates by employing spin-wave propagation with drift velocities\nat room temperature. Our findings reveal a giant interfacial DMI coefficient\n(\\mathit{D} _{s}) of 1.96 pJ/m in LSMO/NdGaO_{3}(110) system, exceeding\npreviously reported values in oxides by one to two orders of magnitude.\nFirst-principles calculations further show that with the aid of 6\\mathit{s}\nelectrons, the 4\\mathit{f} electrons from Nd play a key role in enhancing the\nspin-orbit coupling of the 3\\mathit{d} electrons in Mn, ultimately leading to\nthe observed giant interfacial DMI. This discovery of giant interfacial DMI\nthrough engineering the interface of oxides provides valuable insights for\nadvancing functional chiral magnonics and spintronics.","PeriodicalId":501234,"journal":{"name":"arXiv - PHYS - Materials Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2408.04959","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The Dzyaloshinskii-Moriya interaction (DMI) plays a critical role in stabilizing topological spin textures, a key area of growing interest in oxide-based spintronics. While most of reported topological phenomena found in manganites are related to the bulk-like DMI, the understanding of interfacial DMI and its origin in oxide interfaces remain limited. Here we experimentally investigate the interfacial DMI of La_{0.7}Sr_{0.3}MnO_{3} (LSMO) films grown on various substrates by employing spin-wave propagation with drift velocities at room temperature. Our findings reveal a giant interfacial DMI coefficient (\mathit{D} _{s}) of 1.96 pJ/m in LSMO/NdGaO_{3}(110) system, exceeding previously reported values in oxides by one to two orders of magnitude. First-principles calculations further show that with the aid of 6\mathit{s} electrons, the 4\mathit{f} electrons from Nd play a key role in enhancing the spin-orbit coupling of the 3\mathit{d} electrons in Mn, ultimately leading to the observed giant interfacial DMI. This discovery of giant interfacial DMI through engineering the interface of oxides provides valuable insights for advancing functional chiral magnonics and spintronics.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
过光体 La_{0.7}Sr_{0.3}MnO_{3} 薄膜中巨大的界面 Dzyaloshinskii-Moriya 相互作用
Dzyaloshinskii-Moriya 相互作用(DMI)对拓扑自旋纹理的不稳定起着至关重要的作用,而这正是基于氧化物的自旋电子学日益受到关注的一个关键领域。虽然在锰矿中发现的大多数拓扑现象都与块状 DMI 有关,但人们对界面 DMI 及其在氧化物界面中的起源的了解仍然有限。在这里,我们采用室温下漂移速度的自旋波传播技术,对生长在不同基底上的 La_{0.7}Sr_{0.3}MnO_{3} (LSMO) 薄膜的界面 DMI 进行了实验研究。我们的研究结果表明,LSMO/NdGaO_{3}(110) 系统中的巨界面 DMI 系数(\mathit{D} _{s})为 1.96 pJ/m,比之前报道的氧化物中的数值高出一到两个数量级。第一性原理计算进一步表明,借助6\mathit{s}电子,来自Nd的4\mathit{f}电子在增强Mn中3\mathit{d}电子的自旋轨道耦合方面发挥了关键作用,最终导致了观察到的巨界面DMI。这一通过氧化物界面工程发现的巨界面 DMI 为推进功能手性磁学和自旋电子学提供了宝贵的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Anionic disorder and its impact on the surface electronic structure of oxynitride photoactive semiconductors Accelerating the Training and Improving the Reliability of Machine-Learned Interatomic Potentials for Strongly Anharmonic Materials through Active Learning Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$ Sampling Latent Material-Property Information From LLM-Derived Embedding Representations Smart Data-Driven GRU Predictor for SnO$_2$ Thin films Characteristics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1