Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-08-22 DOI:10.1016/j.mejo.2024.106386

Xiaomin He , Haitao Zhang , Liqiao Wu , Jichao Hu , Min Lu , Lei Yuan

{"title":"Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT","authors":"Xiaomin He , Haitao Zhang , Liqiao Wu , Jichao Hu , Min Lu , Lei Yuan","doi":"10.1016/j.mejo.2024.106386","DOIUrl":null,"url":null,"abstract":"<div>This paper reports a comprehensive analysis of temperature on DC and AC characteristics of AlN/β-Ga2O3 HEMT. As the temperature increases from 300 °C to 500 °C, the drain current (IDS) decreases by 50 %, leading to a 50 % decrease in transconductance (gm) without self heating effect. This decrease in maximum gm further resulted in a significant reduction of 49 % in the cut-off frequency (fT). Incorporating the self-heating effect, while the threshold voltage (Vth) remains unaffected, the maximum gm experiences a marked decrease. At 300 °C, the decrease reaches 58 %, while at 500 °C, the decrease is 36 %. Additionally, the saturation IDS shows a negative differential resistance phenomenon. Furthermore, the decrease at 300°Cin fT reaches 45 %, while at 500 °C, the decrease is 30 %. The main reason for the performance degradation caused by self heating effect at low temperatures is that the peak temperature at the channel of the device increases more significantly at low temperatures, resulting in a more significant decrease in mobility.</div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000900","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

This paper reports a comprehensive analysis of temperature on DC and AC characteristics of AlN/β-Ga₂O₃ HEMT. As the temperature increases from 300 °C to 500 °C, the drain current (I_DS) decreases by 50 %, leading to a 50 % decrease in transconductance (g_m) without self heating effect. This decrease in maximum g_m further resulted in a significant reduction of 49 % in the cut-off frequency (f_T). Incorporating the self-heating effect, while the threshold voltage (V_th) remains unaffected, the maximum g_m experiences a marked decrease. At 300 °C, the decrease reaches 58 %, while at 500 °C, the decrease is 36 %. Additionally, the saturation I_DS shows a negative differential resistance phenomenon. Furthermore, the decrease at 300°Cin f_T reaches 45 %, while at 500 °C, the decrease is 30 %. The main reason for the performance degradation caused by self heating effect at low temperatures is that the peak temperature at the channel of the device increases more significantly at low temperatures, resulting in a more significant decrease in mobility.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

AlN/ β-Ga2O3 HEMT 温度特性仿真研究

本文全面分析了温度对 AlN/β-Ga2O3 HEMT 直流和交流特性的影响。随着温度从 300 °C 升高到 500 °C，漏极电流 (IDS) 下降了 50%，导致跨导 (gm) 下降了 50%，而没有自发热效应。最大 gm 的降低进一步导致截止频率 (fT) 显著降低 49%。加入自热效应后，虽然阈值电压（Vth）未受影响，但最大 gm 却明显下降。在 300 °C 时，下降幅度达到 58%，而在 500 °C 时，下降幅度为 36%。此外，饱和 IDS 显示出负微分电阻现象。此外，在 300 ℃ 时，fT 下降了 45%，而在 500 ℃ 时，下降了 30%。低温下自加热效应导致性能下降的主要原因是，器件沟道的峰值温度在低温下会更显著地升高，从而导致迁移率更显著地下降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.

期刊最新文献

Thermoreflectance property of gallium nitride 3-D impedance matching network (IMN) based on through-silicon via (TSV) for RF energy harvesting system A new method for temperature field characterization of microsystems based on transient thermal simulation Editorial Board Study on the influence mechanism of gate oxide degradation on DM EMI signals in SiC MOSFET