The sensitivity analysis of geometric parameters on the power cycling reliability of bond wires

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-08-31 DOI:10.1016/j.microrel.2024.115495
Luhong Xie , Erping Deng , Dianjie Gu , Hao Liu , Ying Zhang , Yongzhang Huang
{"title":"The sensitivity analysis of geometric parameters on the power cycling reliability of bond wires","authors":"Luhong Xie ,&nbsp;Erping Deng ,&nbsp;Dianjie Gu ,&nbsp;Hao Liu ,&nbsp;Ying Zhang ,&nbsp;Yongzhang Huang","doi":"10.1016/j.microrel.2024.115495","DOIUrl":null,"url":null,"abstract":"<div><p>Considering the reliability of the bond wire comes as the main factor determining the reliability of power devices at present, and the geometric parameters of the bond wire have an in-negligible effect. A Finite Element (FE) simulation model based on a discrete device with TO-247 package and a single bond wire is established in this paper, and the influences of the geometric parameters are analyzed, which include the joint length <em>L</em>, the diameter <em>D</em>, and the aspect ratio <em>λ</em>. Then to understand the influence degree of the parameter on the reliability, the sensitivity analysis of these geometric parameters is carried out based on the sobol' method, using the Monte Carlo method for estimating the sensitivity index. The results show that increasing the joint length <em>L</em>, the diameter <em>D</em> and the aspect ratio <em>λ</em> all have a negative impact on the bond wire reliability, while a positive influence is presented by increasing the aspect ratio <em>λ</em> in the case without epoxy mold compound (EMC). This is because of the EMC's protective effect which inhibits the bond wire's thermal expansion. The aspect ratio <em>λ</em> is the most sensitive parameter of the three geometric parameters since it has the largest total sensitive index.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"161 ","pages":"Article 115495"},"PeriodicalIF":1.6000,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001756","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Considering the reliability of the bond wire comes as the main factor determining the reliability of power devices at present, and the geometric parameters of the bond wire have an in-negligible effect. A Finite Element (FE) simulation model based on a discrete device with TO-247 package and a single bond wire is established in this paper, and the influences of the geometric parameters are analyzed, which include the joint length L, the diameter D, and the aspect ratio λ. Then to understand the influence degree of the parameter on the reliability, the sensitivity analysis of these geometric parameters is carried out based on the sobol' method, using the Monte Carlo method for estimating the sensitivity index. The results show that increasing the joint length L, the diameter D and the aspect ratio λ all have a negative impact on the bond wire reliability, while a positive influence is presented by increasing the aspect ratio λ in the case without epoxy mold compound (EMC). This is because of the EMC's protective effect which inhibits the bond wire's thermal expansion. The aspect ratio λ is the most sensitive parameter of the three geometric parameters since it has the largest total sensitive index.

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几何参数对键合丝功率循环可靠性的敏感性分析
键合线的可靠性是目前决定功率器件可靠性的主要因素,而键合线的几何参数对其影响微乎其微。本文建立了一个基于 TO-247 封装的分立器件和单键合导线的有限元(FE)仿真模型,分析了几何参数的影响因素,包括接头长度 L、直径 D 和长宽比 λ。结果表明,增加接头长度 L、直径 D 和纵横比 λ 都会对键合导线的可靠性产生负面影响,而在不使用环氧模塑料 (EMC) 的情况下,增加纵横比 λ 则会产生正面影响。这是因为 EMC 的保护作用抑制了键合丝的热膨胀。长宽比 λ 是三个几何参数中最敏感的参数,因为它的总敏感指数最大。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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